IRF7756G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7756G 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 310 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TSSOP8
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IRF7756G datasheet
..1. Size:236K international rectifier
irf7756gpbf.pdf 
PD- 96153A IRF7756GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3A l Very Small SOIC Package 0.058@VGS = -2.5V -3.4A l Low Profile (
7.1. Size:238K international rectifier
irf7756.pdf
PD -94159 IRF7756 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package 0.058@VGS = -2.5V 3.4A Low Profile (
8.1. Size:228K 1
irf7752g.pdf
PD- 96151A IRF7752GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual N-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 30V 0.030@VGS = 10V 4.6A l Low Profile (
8.2. Size:226K 1
irf7750g.pdf
PD-96144A IRF7750GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package VDSS = -20V l Low Profile (
8.3. Size:311K international rectifier
irf7759l2tr1pbf irf7759l2trpbf.pdf
PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket 75V min 20V max 1.8m @ 10V l Optimized for Synchronous Rectification Qg tot Qgd Vgs(th) l Low Cond
8.4. Size:117K international rectifier
irf7752.pdf
PD -94030A IRF7752 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual N-Channel MOSFET 30V 0.030@VGS = 10V 4.6A Very Small SOIC Package 0.036@VGS = 4.5V 3.9A Low Profile (
8.5. Size:245K international rectifier
auirf7759l2.pdf
PD - 96426 AUTOMOTIVE GRADE AUIRF7759L2TR AUIRF7759L2TR1 Advanced Process Technology Automotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC and V(BR)DSS 75V other Heavy Load Applications Exceptionally Small Footprint and Low Profile RDS(on) typ. 1.8m High Power Density max. 2.3m Low Parasitic Parameters Dual Sided Cooling
8.6. Size:144K international rectifier
irf7754.pdf
PD - 94224 IRF7754 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 25m @VGS = -4.5V -5.4A Very Small SOIC Package 34m @VGS = -2.5V -4.6A Low Profile (
8.7. Size:162K international rectifier
irf7751.pdf
PD - 94002 IRF7751 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -30V 35m @VGS = -10V -4.5A Very Small SOIC Package 55m @VGS = -4.5V -3.8A Low Profile (
8.8. Size:234K international rectifier
irf7755gpbf.pdf
PD- 96150A IRF7755GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -20V 51m @VGS = -4.5V -3.7A l Very Small SOIC Package 86m @VGS = -2.5V -2.8A l Low Profile (
8.9. Size:236K international rectifier
irf7754gpbf.pdf
PD- 96152A IRF7754GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 25m @VGS = -4.5V -5.4A l Very Small SOIC Package 34m @VGS = -2.5V -4.6A l Low Profile (
8.10. Size:249K international rectifier
irf7755.pdf
PD -93995A IRF7755 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m @VGS = -4.5V -3.7A Very Small SOIC Package 86m @VGS = -2.5V -2.8A Low Profile (
8.11. Size:110K international rectifier
irf7750.pdf
PD - 93848A IRF7750 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Very Small SOIC Package Low Profile (
8.12. Size:132K international rectifier
irf7757.pdf
PD - 94174 IRF7757 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) Dual N-Channel MOSFET 20V 35@VGS = 4.5V 4.8A Very Small SOIC Package 40@VGS = 2.5V 3.8A Low Profile (
8.13. Size:269K international rectifier
irf7759l2pbf.pdf
IRF7759L2PbF DirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket 75V min 20V max 1.8m @ 10V l Optimized for Synchronous Rectification Qg tot Qgd Vgs(th) l Low Conduction Losses 200nC 62nC 3.0V
8.14. Size:235K international rectifier
irf7751gpbf.pdf
PD - 96145A IRF7751GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package -30V 35m @VGS = -10V -4.5A l Low Profile (
8.15. Size:441K infineon
auirf7759l2tr.pdf
AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi
8.16. Size:2103K cn vbsemi
irf7751gtr.pdf
IRF7751GTR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2 P-Chan
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