IRF5810 Datasheet. Equivalente

 ..1. Size:208K  international rectifier
 irf5810.pdf

PD -94198 IRF5810 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) Dual P-Channel MOSFET -20V 90@VGS = -4.5V -2.9A Surface Mount 135@VGS = -2.5V -2.3A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ext

 9.1. Size:127K  international rectifier
 irf5803d2.pdf

PD- 94016 IRF5803D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -40V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET 3 6 RDS(on) = 112m S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.51V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky

 9.2. Size:218K  international rectifier
 irf5806.pdf

PD - 93997 IRF5806 HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -20V 86m @VGS = -4.5V -4.0A P-Channel MOSFET 147m @VGS = -2.5V -3.0A Available in Tape & Reel Description A 1 6 New trench HEXFET Power MOSFETs from D D International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance 2 5 D D

 9.3. Size:109K  international rectifier
 irf5803.pdf

PD-94015 IRF5803 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -40V 112@VGS = -10V -3.4A Surface Mount 190@VGS = -4.5V -2.7A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve t

 9.4. Size:198K  international rectifier
 irf5805pbf.pdf

PD -95340A IRF5805PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Surface Mount -30V 0.098@VGS = -10V -3.8A l Available in Tape & Reel 0.165@VGS = -4.5V -3.0A l Low Gate Charge l Lead-Free l Halogen-Free Description A 1 6 These P-channel MOSFETs from International Rectifier D D utilize advanced processing techniques to achieve the

 9.5. Size:120K  international rectifier
 irf5801.pdf

PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 2.2 0.6A Benefits A Low Gate to Drain Charge to Reduce 1 6 D D Switching Losses Fully Characterized Capacitance Including 2 5 D D Effective COSS to Simplify Design, (See App. Note AN1001) 3 4 G S Fully Characterized Avalanche

 9.6. Size:239K  international rectifier
 irf5852.pdf

PD - 93999 IRF5852 HEXFET Power MOSFET ) VDSS RDS(on) max ( ) ID ) ) ) Ultra Low On-Resistance Dual N-Channel MOSFET 20 V 0.090@VGS = 4.5V 2.7A Surface Mount 0.120@VGS = 2.5V 2.2A Available in Tape & Reel Low Gate Charge Description These N-channel MOSFETs from International Rectifier G1 1 6 D1 utilize advanced processing techniques to achieve the extremel

 9.7. Size:127K  international rectifier
 irf5802.pdf

PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters 150V 1.2 @VGS = 10V 0.9A Benefits Low Gate to Drain Charge to Reduce Switching Losses D 1 6 D Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See D 2 5 D App. Note AN1001) Fully Characterized Avalanche Voltag

 9.8. Size:126K  international rectifier
 irf5805.pdf

PD -94029 IRF5805 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -30V 0.098@VGS = -10V -3.8A Surface Mount 0.165@VGS = -4.5V -3.0A Available in Tape & Reel Low Gate Charge Description A 1 6 These P-channel MOSFETs from International Rectifier D D utilize advanced processing techniques to achieve the 2 extremely low on-resistance per sil

 9.9. Size:223K  international rectifier
 irf5801pbf.pdf

PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 2.2W 0.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free TSOP-6 l Hal

 9.10. Size:197K  international rectifier
 irf5801pbf-1.pdf

IRF5801PbF-1 HEXFET Power MOSFET VDS 200 V RDS(on) max D 1 6 D 2.20 (@V = 10V) GS D 2 5 D Qg (typical) 3.9 nC ID 0.6 A G 3 4 S (@T = 25 C) A TSOP-6 Features Benefits Industry-standard pinout TSOP-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1,

 9.11. Size:126K  international rectifier
 irf5850.pdf

PD - 93947 IRF5850 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Surface Mount Available in Tape & Reel Low Gate Charge RDS(on) = 0.135 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the desi

 9.12. Size:205K  international rectifier
 irf5802pbf.pdf

PD- 95475B IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 1.2W@VGS = 10V 0.9A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free TSO

 9.13. Size:143K  international rectifier
 irf5803d2pbf.pdf

PD- 95160A IRF5803D2PbF TM FETKY MOSFET & Schottky Diode l Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K l Ideal For Buck Regulator Applications VDSS = -40V 2 7 A K l P-Channel HEXFET l Low VF Schottky Rectifier 3 6 RDS(on) = 112m S D l SO-8 Footprint 4 5 G D l Lead-Free Schottky Vf = 0.51V Top View Description The FETKYTM family of Co-packaged HEXF

 9.14. Size:172K  international rectifier
 irf5851.pdf

PD-93998A IRF5851 HEXFET Power MOSFET l Ultra Low On-Resistance N-Ch P-Ch l Dual N and P Channel MOSFET G1 D1 1 6 l Surface Mount VDSS 20V -20V l Available in Tape & Reel S1 S2 2 5 l Low Gate Charge G2 3 4 D2 RDS(on) 0.090 0.135 Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on

 9.15. Size:132K  international rectifier
 irf5804.pdf

PD - 94333B IRF5804 HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 198@VGS = -10V -2.5A l Surface Mount 334@VGS = -4.5V -2.0A l Available in Tape & Reel l Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve the extremely low o

 9.16. Size:107K  international rectifier
 irf5800.pdf

PD - 93850A IRF5800 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -30V l Surface Mount 2 5 D D l Available in Tape & Reel l Low Gate Charge 3 4 G S RDS(on) = 0.085 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

 9.17. Size:198K  international rectifier
 irf5806pbf.pdf

PD - 95476B IRF5806PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Surface Mount -20V 86m @VGS = -4.5V -4.0A l Available in Tape & Reel 147m @VGS = -2.5V -3.0A l Low Gate Charge l Lead-Free l Halogen-Free Description A 1 6 These P-channel MOSFETs from International Rectifier D D utilize advanced processing techniques to achieve

 9.18. Size:296K  infineon
 irf5803pbf.pdf

IRF5803PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET VDSS RDS(on) (max) ID Surface Mount 112m @ VGS = -10V -3.4A Available in Tape & Reel - 40V Low Gate Charge 190m @ VGS = -4.5V -2.7A Lead-Free Halogen-Free A 1 6 D D Description These P-channel HEXFET Power MOSFETs from International 2 5 D D R

 9.19. Size:1845K  cn vbsemi
 irf5803trpbf.pdf

IRF5803TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm

 9.20. Size:823K  cn vbsemi
 irf5851tr.pdf

IRF5851TR www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at

 9.21. Size:1047K  cn vbsemi
 irf5805trpbf.pdf

IRF5805TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm

 9.22. Size:3729K  cn vbsemi
 irf5802tr.pdf

IRF5802TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS