IRF9362 Todos los transistores

 

IRF9362 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9362
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

IRF9362 Datasheet (PDF)

 ..1. Size:286K  international rectifier
irf9362pbf.pdf pdf_icon

IRF9362

PD - 96312AIRF9362PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 21.0 m (@VGS = -10V)RDS(on) max 32.0 m(@VGS = -4.5V) Qg (typical)13 nCSO-8Top ViewID -8.0 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in Multi-Vendor

 9.1. Size:219K  international rectifier
irf9317pbf.pdf pdf_icon

IRF9362

PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor

 9.2. Size:308K  international rectifier
irf9388pbf.pdf pdf_icon

IRF9362

PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant

 9.3. Size:232K  international rectifier
irf9310pbf-1.pdf pdf_icon

IRF9362

IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
Back to Top

 


 
.