IRF7342Q Todos los transistores

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IRF7342Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7342Q

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.4 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.17 Ohm

Empaquetado / Estuche: SO8

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IRF7342Q Datasheet (PDF)

3.1. irf7342d2.pdf Size:125K _international_rectifier

IRF7342Q
IRF7342Q

PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -55V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 105m? S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.61V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes of

3.2. irf7342.pdf Size:136K _international_rectifier

IRF7342Q
IRF7342Q

PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -55V 2 7 Dual P-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.105? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

4.1. irf734pbf.pdf Size:1781K _international_rectifier

IRF7342Q
IRF7342Q

PD-95973 IRF734PbF Lead-Free 12/20/04 Document Number: 91049 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049 www.vishay.com 5 IRF734PbF Document Number: 91049 www.vishay.com 6 IRF734PbF Document Number: 91049 www.visha

4.2. irf7341.pdf Size:134K _international_rectifier

IRF7342Q
IRF7342Q

PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = 55V 2 7 Dual N-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.050? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

4.3. irf7343.pdf Size:143K _international_rectifier

IRF7342Q
IRF7342Q

PD -91709 IRF7343 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050? 0.105? Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processi

4.4. irf734.pdf Size:206K _international_rectifier

IRF7342Q
IRF7342Q

4.5. irf7341q.pdf Size:137K _international_rectifier

IRF7342Q
IRF7342Q

PD - 94391A IRF7341Q Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection VDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1A Benefits Advanced Process Technology 0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101]

Otros transistores... IRF7750 , IRF9362 , IRF7755G , IRF7306Q , IRF7342 , IRF7304 , IRF5850 , IRF7104 , 2N3824 , IRFHS9351 , IRF9395M , IRF7314 , IRF7504 , IRF7751G , IRF7506 , IRF7316 , IRF7328 .

 


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