IRF7314 Todos los transistores

 

IRF7314 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7314

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 5.3 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 19 nC

Resistencia drenaje-fuente RDS(on): 0.058 Ohm

Empaquetado / Estuche: SO8

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IRF7314 Datasheet (PDF)

1.1. irf7314q.pdf Size:148K _international_rectifier

IRF7314
IRF7314

PD -93945A IRF7314Q HEXFET Power MOSFET Typical Applications VDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection 0.098@VGS = -2.7V -4.42A Air bag Benefits Advanced Process Technology Dual P-Channel MOSFET 1 8 S1 D1 Ultra Low On-Resistance 2 7 G1 D1 175C Operating Temperature 3 6 S2 D2 Repetitive Avalanch

1.2. irf7314.pdf Size:147K _international_rectifier

IRF7314
IRF7314

PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 4.1. irf7313qpbf.pdf Size:218K _upd-mosfet

IRF7314
IRF7314

PD - 96125A IRF7313QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150°C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029Ω Description Top View These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastes

4.2. irf7316pbf-1.pdf Size:203K _upd-mosfet

IRF7314
IRF7314

IRF7316TRPbF-1 HEXFET® Power MOSFET VDS -30 V 1 8 S1 D1 RDS(on) max 0.058 Ω 2 7 G1 D1 (@V = -10V) GS Qg (typical) 23 nC 3 6 S2 D2 ID 4 5 -4.9 A G2 D2 (@T = 25°C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En

 4.3. irf7313pbf-1.pdf Size:204K _upd-mosfet

IRF7314
IRF7314

IRF7313PbF-1 HEXFET® Power MOSFET VDS 30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 Ω (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 nC 4 5 G2 D2 ID 6.5 A SO-8 (@T = 25°C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Enviro

4.4. irf7316qpbf.pdf Size:215K _upd-mosfet

IRF7314
IRF7314

PD - 96126A IRF7316QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P- Channel MOSFET VDSS = -30V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150°C Operating Temperature 4 5 G2 D2 l Lead-Free RDS(on) = 0.058Ω Top View Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the laste

 4.5. auirf7313q.pdf Size:239K _update-mosfet

IRF7314
IRF7314

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23mΩ 3 6 S2 D2 l 175°C Operating Temperature max. 29mΩ 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des

4.6. irf7317.pdf Size:156K _international_rectifier

IRF7314
IRF7314

PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029? 0.058? Description Top View Fifth Generation HEXFETs from International Rectifier utilize ad

4.7. irf7311.pdf Size:209K _international_rectifier

IRF7314
IRF7314

PD - 91435C IRF7311 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.8. irf7313.pdf Size:105K _international_rectifier

IRF7314
IRF7314

PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

4.9. irf7316s.pdf Size:103K _international_rectifier

IRF7314
IRF7314

PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

4.10. irf7319.pdf Size:137K _international_rectifier

IRF7314
IRF7314

PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.029? 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier util

4.11. irf7316.pdf Size:103K _international_rectifier

IRF7314
IRF7314

PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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