IRF7751G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 96145AIRF7751GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package-30V 35m@VGS = -10V -4.5Al Low Profile (

IRF7751GTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Chan

PD - 94002IRF7751HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET-30V 35m@VGS = -10V -4.5A Very Small SOIC Package55m@VGS = -4.5V -3.8A Low Profile (

PD- 96151AIRF7752GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual N-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package30V 0.030@VGS = 10V 4.6Al Low Profile (

PD-96144AIRF7750GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETl Very Small SOIC PackageVDSS = -20Vl Low Profile (

PD - 96283IRF7759L2TRPbFIRF7759L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond

PD -94030AIRF7752HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual N-Channel MOSFET30V 0.030@VGS = 10V 4.6A Very Small SOIC Package0.036@VGS = 4.5V 3.9A Low Profile (

PD - 96426AUTOMOTIVE GRADEAUIRF7759L2TRAUIRF7759L2TR1 Advanced Process TechnologyAutomotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC andV(BR)DSS75Vother Heavy Load Applications Exceptionally Small Footprint and Low ProfileRDS(on) typ.1.8m High Power Densitymax. 2.3m Low Parasitic Parameters Dual Sided Cooling

PD - 94224IRF7754HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4A Very Small SOIC Package34m@VGS = -2.5V -4.6A Low Profile (

PD -94159IRF7756HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package0.058@VGS = -2.5V 3.4A Low Profile (

PD- 96150AIRF7755GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7Al Very Small SOIC Package86m@VGS = -2.5V -2.8Al Low Profile (

PD- 96152AIRF7754GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4Al Very Small SOIC Package34m@VGS = -2.5V -4.6Al Low Profile (

PD- 96153AIRF7756GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3Al Very Small SOIC Package0.058@VGS = -2.5V -3.4Al Low Profile (

PD -93995AIRF7755HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7A Very Small SOIC Package86m@VGS = -2.5V -2.8A Low Profile (

PD - 93848AIRF7750HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFETVDSS = -20V Very Small SOIC Package Low Profile (

PD - 94174IRF7757HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) Dual N-Channel MOSFET20V 35@VGS = 4.5V 4.8A Very Small SOIC Package40@VGS = 2.5V 3.8A Low Profile (

IRF7759L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 62nC 3.0V

AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi