IRF7316 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7316

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.9 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 23 nC

Resistencia drenaje-fuente RDS(on): 0.098 Ohm

Empaquetado / Estuche: SO8

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IRF7316 Datasheet (PDF)

1.1. irf7316pbf-1.pdf Size:203K _upd-mosfet

IRF7316TRPbF-1 HEXFET® Power MOSFET VDS -30 V 1 8 S1 D1 RDS(on) max 0.058 Ω 2 7 G1 D1 (@V = -10V) GS Qg (typical) 23 nC 3 6 S2 D2 ID 4 5 -4.9 A G2 D2 (@T = 25°C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En

1.2. irf7316qpbf.pdf Size:215K _upd-mosfet

PD - 96126A IRF7316QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P- Channel MOSFET VDSS = -30V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150°C Operating Temperature 4 5 G2 D2 l Lead-Free RDS(on) = 0.058Ω Top View Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the laste

1.3. irf7316s.pdf Size:103K _international_rectifier

PD - 9.1505A IRF7316 PRELIMINARY HEXFET� Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

1.4. irf7316.pdf Size:103K _international_rectifier