IRF7754G
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7754G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 12
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8
V
|Id|ⓘ - Corriente continua de drenaje: 5.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18
nS
Cossⓘ - Capacitancia
de salida: 618
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025
Ohm
Paquete / Cubierta:
TSSOP8
Búsqueda de reemplazo de IRF7754G
MOSFET
-
Selección ⓘ de transistores por parámetros
IRF7754G
Datasheet (PDF)
..1. Size:236K international rectifier
irf7754gpbf.pdf 
PD- 96152AIRF7754GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4Al Very Small SOIC Package34m@VGS = -2.5V -4.6Al Low Profile (
7.1. Size:144K international rectifier
irf7754.pdf
PD - 94224IRF7754HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4A Very Small SOIC Package34m@VGS = -2.5V -4.6A Low Profile (
8.1. Size:228K 1
irf7752g.pdf
PD- 96151AIRF7752GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual N-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package30V 0.030@VGS = 10V 4.6Al Low Profile (
8.2. Size:226K 1
irf7750g.pdf
PD-96144AIRF7750GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETl Very Small SOIC PackageVDSS = -20Vl Low Profile (
8.3. Size:311K international rectifier
irf7759l2tr1pbf irf7759l2trpbf.pdf
PD - 96283IRF7759L2TRPbFIRF7759L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond
8.4. Size:117K international rectifier
irf7752.pdf
PD -94030AIRF7752HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual N-Channel MOSFET30V 0.030@VGS = 10V 4.6A Very Small SOIC Package0.036@VGS = 4.5V 3.9A Low Profile (
8.5. Size:245K international rectifier
auirf7759l2.pdf
PD - 96426AUTOMOTIVE GRADEAUIRF7759L2TRAUIRF7759L2TR1 Advanced Process TechnologyAutomotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC andV(BR)DSS75Vother Heavy Load Applications Exceptionally Small Footprint and Low ProfileRDS(on) typ.1.8m High Power Densitymax. 2.3m Low Parasitic Parameters Dual Sided Cooling
8.6. Size:238K international rectifier
irf7756.pdf
PD -94159IRF7756HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package0.058@VGS = -2.5V 3.4A Low Profile (
8.7. Size:162K international rectifier
irf7751.pdf
PD - 94002IRF7751HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET-30V 35m@VGS = -10V -4.5A Very Small SOIC Package55m@VGS = -4.5V -3.8A Low Profile (
8.8. Size:234K international rectifier
irf7755gpbf.pdf
PD- 96150AIRF7755GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7Al Very Small SOIC Package86m@VGS = -2.5V -2.8Al Low Profile (
8.9. Size:236K international rectifier
irf7756gpbf.pdf
PD- 96153AIRF7756GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3Al Very Small SOIC Package0.058@VGS = -2.5V -3.4Al Low Profile (
8.10. Size:249K international rectifier
irf7755.pdf
PD -93995AIRF7755HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7A Very Small SOIC Package86m@VGS = -2.5V -2.8A Low Profile (
8.11. Size:110K international rectifier
irf7750.pdf
PD - 93848AIRF7750HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFETVDSS = -20V Very Small SOIC Package Low Profile (
8.12. Size:132K international rectifier
irf7757.pdf
PD - 94174IRF7757HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) Dual N-Channel MOSFET20V 35@VGS = 4.5V 4.8A Very Small SOIC Package40@VGS = 2.5V 3.8A Low Profile (
8.13. Size:269K international rectifier
irf7759l2pbf.pdf
IRF7759L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 62nC 3.0V
8.14. Size:235K international rectifier
irf7751gpbf.pdf
PD - 96145AIRF7751GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package-30V 35m@VGS = -10V -4.5Al Low Profile (
8.15. Size:441K infineon
auirf7759l2tr.pdf
AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi
8.16. Size:2103K cn vbsemi
irf7751gtr.pdf
IRF7751GTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Chan
Otros transistores... IRFHS9351
, IRF9395M
, IRF7314
, IRF7504
, IRF7751G
, IRF7506
, IRF7316
, IRF7328
, NCEP15T14
, IRF7509
, IRF7309
, IRF7105
, IRF7307
, IRF7105Q
, IRF7389
, IRF7343I
, IRF7343Q
.
History: IRF7703
| SST65R650S2
| IPN80R600P7
| KTK5164S
| WMM26N60C4
| IRF8707PBF-1
| IPP039N04L
