IRF7754G Todos los transistores

 

IRF7754G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7754G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 5.5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: TSSOP8

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IRF7754G Datasheet (PDF)

1.1. irf7754gpbf.pdf Size:236K _upd-mosfet

IRF7754G
IRF7754G

PD- 96152A IRF7754GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 25mΩ@VGS = -4.5V -5.4A l Very Small SOIC Package 34mΩ@VGS = -2.5V -4.6A l Low Profile (< 1.2mm) 49mΩ@VGS = -1.8V -3.9A l Available in Tape & Reel l Lead-Free l Halogen-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced proce

3.1. irf7754.pdf Size:144K _international_rectifier

IRF7754G
IRF7754G

PD - 94224 IRF7754 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 25m?@VGS = -4.5V -5.4A Very Small SOIC Package 34m?@VGS = -2.5V -4.6A Low Profile (< 1.2mm) 49m?@VGS = -1.8V -3.9A Available in Tape & Reel Description 1 8 HEXFET Power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6

 4.1. irf7751gpbf.pdf Size:235K _upd-mosfet

IRF7754G
IRF7754G

PD - 96145A IRF7751GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package -30V 35mΩ@VGS = -10V -4.5A l Low Profile (< 1.2mm) 55mΩ@VGS = -4.5V -3.8A l Available in Tape & Reel l Lead-Free l Halogen-Free Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to ac

4.2. irf7759l2tr1pbf irf7759l2trpbf.pdf Size:311K _upd-mosfet

IRF7754G
IRF7754G

PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET™ Power MOSFET ‚ l RoHS Compliant, Halogen Free Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket 75V min ±20V max 1.8mΩ@ 10V l Optimized for Synchronous Rectification Qg tot Qgd Vgs(th) l Low Cond

 4.3. irf7756gpbf.pdf Size:236K _upd-mosfet

IRF7754G
IRF7754G

PD- 96153A IRF7756GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3A l Very Small SOIC Package 0.058@VGS = -2.5V -3.4A l Low Profile (< 1.2mm) 0.087@VGS = -1.8V -2.2A l Available in Tape & Reel l Lead-Free l Halogen-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced pro

4.4. irf7755gpbf.pdf Size:234K _upd-mosfet

IRF7754G
IRF7754G

PD- 96150A IRF7755GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -20V 51mΩ@VGS = -4.5V -3.7A l Very Small SOIC Package 86mΩ@VGS = -2.5V -2.8A l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free l Halogen-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to a

 4.5. auirf7759l2.pdf Size:245K _update-mosfet

IRF7754G
IRF7754G

PD - 96426 AUTOMOTIVE GRADE AUIRF7759L2TR AUIRF7759L2TR1 • Advanced Process Technology Automotive DirectFET® Power MOSFET ‚ • Optimized for Automotive Motor Drive, DC-DC and V(BR)DSS 75V other Heavy Load Applications • Exceptionally Small Footprint and Low Profile RDS(on) typ. 1.8mΩ • High Power Density max. 2.3mΩ • Low Parasitic Parameters • Dual Sided Cooling

4.6. irf7757.pdf Size:132K _international_rectifier

IRF7754G
IRF7754G

PD - 94174 IRF7757 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Dual N-Channel MOSFET 20V 35@VGS = 4.5V 4.8A Very Small SOIC Package 40@VGS = 2.5V 3.8A Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Description HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.7. irf7750.pdf Size:110K _international_rectifier

IRF7754G
IRF7754G

PD - 93848A IRF7750 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel RDS(on) = 0.030? TSSOP-8 Description HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

4.8. irf7752.pdf Size:117K _international_rectifier

IRF7754G
IRF7754G

PD -94030A IRF7752 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual N-Channel MOSFET 30V 0.030@VGS = 10V 4.6A Very Small SOIC Package 0.036@VGS = 4.5V 3.9A Low Profile (< 1.1mm) Available in Tape & Reel Description HEXFET power MOSFETs from International Rectifier 1 8 utilize advanced processing techniques to achieve ex- 2 7 tremely low on-resistance per

4.9. irf7756.pdf Size:238K _international_rectifier

IRF7754G
IRF7754G

PD -94159 IRF7756 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package 0.058@VGS = -2.5V 3.4A Low Profile (< 1.2mm) 0.087@VGS = -1.8V 2.2A Available in Tape & Reel Description 1 8 HEXFET Power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex-

4.10. irf7755.pdf Size:249K _international_rectifier

IRF7754G
IRF7754G

PD -93995A IRF7755 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m?@VGS = -4.5V -3.7A Very Small SOIC Package 86m?@VGS = -2.5V -2.8A Low Profile (< 1.2mm) Available in Tape & Reel Description 1 8 HEXFET Power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6 tremely low on-resis

4.11. irf7751.pdf Size:162K _international_rectifier

IRF7754G
IRF7754G

PD - 94002 IRF7751 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -30V 35m?@VGS = -10V -4.5A Very Small SOIC Package 55m?@VGS = -4.5V -3.8A Low Profile (< 1.2mm) Available in Tape & Reel Description 1 8 HEXFET power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6 tremely low on-resista

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