IRF7105Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 96102BEND OF LIFEIRF7105QPbFHEXFET Power MOSFETN-CHANNEL MOSFETl Advanced Process Technology1 8 N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7G1 D1l Dual N and P Channel MOSFETVDSS 25V -25Vl Surface Mount 3 6S2 D2l Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2l 150C Operating TemperatureP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

IRF7105TRPbF-1HEXFET Power MOSFETN-CHANNEL MOSFET1 8N-CH P-CH S1 D1VDS 25 -25 V 2 7G1 D1RDS(on) max 3 60.1 0.25 S2 D2(@V = 10V)GS45G2 D2Qg (typical) 9.4 10 nCP-CHANNEL MOSFETID 3.5 -2.3 A SO-8Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techn

PD - 9.1097CIRF7105HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET1 8N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MosfetG1 D1VDSS 25V -25V Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2 Dynamic dv/dt RatingP-CHANNEL MOSFET Fast SwitchingTop ViewID 3.5A -2.3ADescriptionFourth Ge

PD - 95164IRF7105PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Dual N and P Channel Mosfet2 7l Surface MountG1 D1VDSS 25V -25Vl Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating45RDS(on) 0.10 0.25G2 D2l Fast SwitchingP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

IRF7105TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at