IRF7105Q Todos los transistores

 

IRF7105Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7105Q

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: SO8

Búsqueda de reemplazo de MOSFET IRF7105Q

 

IRF7105Q Datasheet (PDF)

3.1. irf7105pbf-1.pdf Size:609K _upd-mosfet

IRF7105Q
IRF7105Q

IRF7105TRPbF-1 HEXFET® Power MOSFET N-CHANNEL MOSFET 1 8 N-CH P-CH S1 D1 VDS 25 -25 V 2 7 G1 D1 RDS(on) max 3 6 0.1 0.25 Ω S2 D2 (@V = 10V) GS 4 5 G2 D2 Qg (typical) 9.4 10 nC P-CHANNEL MOSFET ID 3.5 -2.3 A SO-8 Top View (@T = 25°C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techn

3.2. irf7105.pdf Size:224K _international_rectifier

IRF7105Q
IRF7105Q

PD - 9.1097C IRF7105 HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel Mosfet G1 D1 VDSS 25V -25V Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) 0.10? 0.25? G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET Fast Switching Top View ID 3.5A -2.3A Description Fourth Generation

 4.1. irf710pbf.pdf Size:229K _upd-mosfet

IRF7105Q
IRF7105Q

PD - 95366 IRF710PbF • Lead-Free www.irf.com 1 6/10/04 IRF710PbF 2 www.irf.com IRF710PbF www.irf.com 3 IRF710PbF 4 www.irf.com IRF710PbF www.irf.com 5 IRF710PbF 6 www.irf.com IRF710PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -

4.2. irf7103ipbf.pdf Size:304K _upd-mosfet

IRF7105Q
IRF7105Q

PD -96085A IRF7103IPbF HEXFET® Power MOSFET l Adavanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 50V 2 7 l Dual N-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 RDS(on) = 0.130Ω l Available in Tape & Reel 4 5 G2 D2 l Dynamic dv/dt Rating ID = 3.0A l Fast Switching Top View l Lead-Free Description The SO-8 has been modified through a customized lea

 4.3. irf7103pbf-1.pdf Size:275K _upd-mosfet

IRF7105Q
IRF7105Q

IRF7103PbF-1 HEXFET® Power MOSFET VDS 50 V 1 8 S1 D1 RDS(on) max 0.13 Ω 2 7 G1 D1 (@V = 10V) GS 3 6 S2 D2 RDS(on) max 0.20 Ω 4 5 (@V = 4.5V) G2 D2 GS Qg (typical) 12 nC SO-8 Top View ID 3.0 A (@T = 25°C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturin

4.4. irf710spbf.pdf Size:198K _upd-mosfet

IRF7105Q
IRF7105Q

IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 • Surface Mount RDS(on) ()VGS = 10 V 3.6 • Available in Tape and Reel Qg (Max.) (nC) 17 • Dynamic dV/dt Rating Qgs (nC) 3.4 • Repetitive Avalanche Rated • Fast Switching Qgd (nC) 8.5 • Ease of Paralleling Configuration Sin

 4.5. irf710 irf711 irf712 irf713.pdf Size:152K _fairchild_semi

IRF7105Q
IRF7105Q



4.6. irf710b.pdf Size:859K _fairchild_semi

IRF7105Q
IRF7105Q

November 2001 IRF710B/IRFS710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC) planar, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to Fast switch

4.7. irf7103.pdf Size:169K _international_rectifier

IRF7105Q
IRF7105Q

PD - 9.1095B IRF7103 HEXFET Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 50V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.130? Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.0A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process

4.8. irf710pbf.pdf Size:223K _international_rectifier

IRF7105Q
IRF7105Q

PD - 95366 IRF710PbF Lead-Free www.irf.com 1 6/10/04 Document Number: 91041 www.vishay.com 1 IRF710PbF Document Number: 91041 www.vishay.com 2 IRF710PbF Document Number: 91041 www.vishay.com 3 IRF710PbF Document Number: 91041 www.vishay.com 4 IRF710PbF Document Number: 91041 www.vishay.com 5 IRF710PbF Document Number: 91041 www.vishay.com 6 IRF710PbF TO-220AB Package

4.9. irf7107.pdf Size:158K _international_rectifier

IRF7105Q
IRF7105Q

PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch Ultra Low On-Resistance 1 8 S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 VDSS 20V -20V Surface Mount 3 6 Available in Tape & Reel S2 D2 RDS(on) 0.125? 0.160? Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET ID 3.0A -2.8A Top View Description Fourth Ge

4.10. irf710.pdf Size:165K _international_rectifier

IRF7105Q
IRF7105Q

4.11. irf7101.pdf Size:263K _international_rectifier

IRF7105Q
IRF7105Q

PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.10? Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.5A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processin

4.12. irf7104.pdf Size:158K _international_rectifier

IRF7105Q
IRF7105Q

PD - 9.1096B IRF7104 HEXFET Power MOSFET Adavanced Process Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.250? Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = -2.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced proce

4.13. irf7103q.pdf Size:169K _international_rectifier

IRF7105Q
IRF7105Q

PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection ?) ?) ?) ?) Power Doors, Windows & Seats VDSS RDS(on) max (m?) ID Benefits 50V 130@VGS = 10V 3.0A Advanced Process Technology 200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avala

4.14. irf710s.pdf Size:168K _international_rectifier

IRF7105Q
IRF7105Q

4.15. irf7106.pdf Size:158K _international_rectifier

IRF7105Q
IRF7105Q

PD - 9.1098B IRF7106 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET Ultra Low On-Resistance N-Ch P-Ch 1 8 S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating RDS(on) 0.125? 0.20? 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET ID 3.0A -2.5A Top View Description Fourth Gener

4.16. irf710spbf.pdf Size:1710K _international_rectifier

IRF7105Q
IRF7105Q

PD- 95746 IRF710SPbF Lead-Free 8/23/04 Document Number: 91042 www.vishay.com 1 IRF710SPbF Document Number: 91042 www.vishay.com 2 IRF710SPbF Document Number: 91042 www.vishay.com 3 IRF710SPbF Document Number: 91042 www.vishay.com 4 IRF710SPbF Document Number: 91042 www.vishay.com 5 IRF710SPbF Document Number: 91042 www.vishay.com 6 IRF710SPbF Peak Diode Recovery dv/dt

4.17. irf710a.pdf Size:209K _samsung

IRF7105Q
IRF7105Q

IRF710A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

4.18. irf710 sihf710.pdf Size:203K _vishay

IRF7105Q
IRF7105Q

IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.6 RoHS* Qg (Max.) (nC) 17 Fast Switching COMPLIANT Qgs (nC) 3.4 Ease of Paralleling Qgd (nC) 8.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTI

4.19. irf710.pdf Size:234K _inchange_semiconductor

IRF7105Q
IRF7105Q

isc N-Channel Mosfet Transistor IRF710 ·FEATURES ·Low R DS(on) ·V Rated at ±20V GS ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC mo

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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