AUIRF7316Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRF7316Q
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET AUIRF7316Q
AUIRF7316Q Datasheet (PDF)
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
auirf7316q.pdf
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
auirf7319q.pdf
AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 30V -30V Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.0423 6S2 D2 Dual N and P Channel MOSFET max. 0.029 0.05845G2 D2 Surface Mount P-CHANNEL MOSFETID 6.5A -4.9A Fully Avalanch
auirf7313q.pdf
PD - 97751AUTOMOTIVE GRADEAUIRF7313QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFETV(BR)DSS30V1 8S1 D1l Low On-Resistance2 7G1 D1l Dynamic dV/dT Rating RDS(on) typ.23m3 6S2 D2l 175C Operating Temperature max. 29m4 5l Fast Switching G2 D2l Lead-Free, RoHS CompliantID6.9ATop Viewl Automotive Qualified*Des
auirf7313q.pdf
AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 23m Dual N Channel MOSFET 3 6S2 D2 max. 4 Low On-Resistance 5 29mG2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Lead-Free, RoHS Compliant
Otros transistores... IRF7379Q , IRF7309Q , IRF7507 , IRF7307Q , IRF7343 , IRF7379 , IRF9952Q , AUIRF7319Q , IRF740 , AUIRF7342Q , AUIRF7303Q , AUIRF7103Q , AUIRF7304Q , AUIRF7379Q , AUIRF7341Q , AUIRF7309Q , AUIRF7343Q .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918