AUIRF7103Q Todos los transistores

 

AUIRF7103Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRF7103Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.7 nS
   Cossⓘ - Capacitancia de salida: 69 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SO8
 

 Búsqueda de reemplazo de AUIRF7103Q MOSFET

   - Selección ⓘ de transistores por parámetros

 

AUIRF7103Q Datasheet (PDF)

 ..1. Size:402K  1
auirf7103q.pdf pdf_icon

AUIRF7103Q

AUTOMOTIVE GRADEAUIRF7103QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFET1 8l Low On-Resistance S1 D1V(BR)DSS50V2 7l Dynamic dV/dT Rating G1 D13 6l 175C Operating TemperatureS2 D2RDS(on) max.130m4 5l Fast SwitchingG2 D2l Lead-Free, RoHS CompliantIDTop View 3.0Al Automotive Qualified*DescriptionSpecifically d

 ..2. Size:439K  infineon
auirf7103q.pdf pdf_icon

AUIRF7103Q

AUTOMOTIVE GRADE AUIRF7103Q VDSS Features 1 8S1 D1 50V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D2130m4 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 3.0A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

 8.1. Size:403K  1
auirf7341q.pdf pdf_icon

AUIRF7103Q

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co

 8.2. Size:365K  1
auirf7319q.pdf pdf_icon

AUIRF7103Q

AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 30V -30V Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.0423 6S2 D2 Dual N and P Channel MOSFET max. 0.029 0.05845G2 D2 Surface Mount P-CHANNEL MOSFETID 6.5A -4.9A Fully Avalanch

Otros transistores... IRF7307Q , IRF7343 , IRF7379 , IRF9952Q , AUIRF7319Q , AUIRF7316Q , AUIRF7342Q , AUIRF7303Q , IRF540 , AUIRF7304Q , AUIRF7379Q , AUIRF7341Q , AUIRF7309Q , AUIRF7343Q , AUIRF9952Q , 2SJ168 , 2SJ305 .

History: BUK456-60B | PSMN4R8-100BSE | SI5858DU | SNN3530BNL | SIS412DN | SSP4N80 | SWH15P02

 

 
Back to Top

 


 
.