2SJ344 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteri

2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1829 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA SC-7

2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating

2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC TO-236MODJEITA SC-59Characteristics Symbol Ratin

2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent CircuitMaximum Ratings (Ta = = 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA

2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.

2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Marking Equivalent CircuitMaximum Ratings (Ta = JEDEC TO-236MOD= 25C) ==JEITA SC-59Charac

Ordering number:ENN6420P-Channel Silicon MOSFET2SJ340Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ340] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2

Ordering number:ENN6421P-Channel Silicon MOSFET2SJ348Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C 4V drive.[2SJ348]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220SpecificationsAbsolute Maximum Ratings at Ta = 25CParamete