2SJ360 Todos los transistores

 ..1. Size:204K  toshiba
 2sj360.pdf

2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ360 High Speed, High current Switching Applications Unit mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.55 (typ.) High forward transfer admittance Yfs = 0.9 S (typ.) Low leakage current IDSS =

 ..2. Size:1562K  kexin
 2sj360.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ360 1.70 0.1 Features VDS (V) =-60V ID =-1 A RDS(ON) 0.73 (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 1.2 (VGS =-4V) High forward transfer admittance 1.Gate D 2.Drain 3.Source G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Drain-Gate voltage

 ..3. Size:821K  cn vbsemi
 2sj360.pdf

2SJ360 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.058 at VGS = - 10 V - 6.5 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 5.5 Load Switch S D G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Lim

 9.1. Size:91K  sanyo
 2sj362.pdf

Ordering number EN4918 P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ362] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ362] 6.5 2.3 5.0 0.5

 9.2. Size:28K  panasonic
 2sj364.pdf

Silicon Junction FETs (Small Signal) 2SJ364 2SJ364 Silicon P-Channel Junction Unit mm For analog switch 2.1 0.1 0.425 1.25 0.1 0.425 Features Low ON-resistance 1 Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter Symbol Rating Unit Gate-Drain voltage VGDS 65 V 1 Source Drain current ID 20 mA 2 Drain EIAJ SC-70 Gate cur

 9.3. Size:37K  hitachi
 2sj363.pdf

2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features Low on-resistance Low drive current 4 V gate drive device can be driven from 5 V source Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SJ363 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source vo

 9.4. Size:43K  hitachi
 2sj361.pdf

 9.5. Size:644K  shindengen
 2sj365.pdf

 9.6. Size:667K  shindengen
 2sj368.pdf

 9.7. Size:834K  cn vbsemi
 2sj363.pdf

2SJ363 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABSOL