2SJ610 Todos los transistores

 

2SJ610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ610

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 24 nC

Resistencia drenaje-fuente RDS(on): 2.55 Ohm

Empaquetado / Estuche: New_PWMold

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2SJ610 Datasheet (PDF)

1.1. 2sj610.pdf Size:331K _toshiba

2SJ610
2SJ610

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.85 ? (typ.) • High forward transfer admittance: |Y | = 18 S (typ.) fs • Low leakage current: I = -100 µA (V = -250 V) DSS DS • Enhancement-mode: V = -1.5~-3.5 V (V

5.1. 2sj619.pdf Size:314K _toshiba

2SJ610
2SJ610

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: R = 0.15 ? (typ.) DS (ON) • High forward transfer admittance: ?Y ? = 7.7 S (typ.) fs • Low leakage current: IDSS = -100 µA (max) (V = -100 V)

5.2. 2sj612.pdf Size:28K _sanyo

2SJ610
2SJ610

Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ612] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at

 5.3. 2sj616.pdf Size:32K _sanyo

2SJ610
2SJ610

Ordering number : ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ616] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at Ta

5.4. 2sj615.pdf Size:28K _sanyo

2SJ610
2SJ610

Ordering number : ENN7179 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ615] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at T

Otros transistores... 2SJ345 , 2SJ346 , 2SJ347 , 2SJ360 , 2SJ465 , 2SJ511 , 2SJ537 , 2SJ567 , IRF830 , 2SJ668 , 2SJ680 , 2SJ681 , 2SK1062 , 2SK1359 , 2SK1365 , 2SK1489 , 2SK1826 .

 

 
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