2SJ610 Todos los transistores

 

2SJ610 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ610

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 157 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.55 Ohm

Encapsulados: NEW PWMOLD

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2SJ610 datasheet

 ..1. Size:331K  toshiba
2sj610.pdf pdf_icon

2SJ610

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 1.85 (typ.) High forward transfer admittance Y = 18 S (typ.) fs Low leakage current I = -100 A (V = -250 V) DSS DS Enhancement-mode V = -1.5 -3.5 V

 9.1. Size:143K  1
2sj618.pdf pdf_icon

2SJ610

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOS ) 2SJ618 High-Power Amplifier Applications Unit mm 15.9 MAX. 3.2 0.2 High breakdown voltage VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 2 3 Drain-source v

 9.2. Size:314K  toshiba
2sj619.pdf pdf_icon

2SJ610

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 0.15 (typ.) DS (ON) High forward transfer admittance Y = 7.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -10

 9.3. Size:32K  sanyo
2sj616.pdf pdf_icon

2SJ610

Ordering number ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ616] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Rati

Otros transistores... 2SJ345 , 2SJ346 , 2SJ347 , 2SJ360 , 2SJ465 , 2SJ511 , 2SJ537 , 2SJ567 , 8205A , 2SJ668 , 2SJ680 , 2SJ681 , 2SK1062 , 2SK1359 , 2SK1365 , 2SK1489 , 2SK1826 .

 

 

 


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