2SJ680 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching Applications Unit: mmChopper Regulator, DC/DC Converter and Motor Drive Applications MAX Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs|

2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit: mmApplications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) (VGS = -10 V) 1.1 0.2 High forward transfer admittance: |Yfs| = 5.0 S (typ.) 0.9 Low leakage current:

Ordering number : ENA1057 2SJ683SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ683ApplicationsFeatures Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source V

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2SJ681www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.010 at VGS = - 10 V 55RoHS*- 40COMPLIANT0.014 at VGS = - 4.5 V 54TO-251SGG D SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat