2SJ681 Todos los transistores

2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) (VGS = -10 V) 1.1 0.2 High forward transfer admittance Yfs = 5.0 S (typ.) 0.9 Low leakage current

2SJ681 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.010 at VGS = - 10 V 55 RoHS* - 40 COMPLIANT 0.014 at VGS = - 4.5 V 54 TO-251 S G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gat

2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( -MOS V) 2SJ680 Switching Applications Unit mm Chopper Regulator, DC/DC Converter and Motor Drive Applications MAX Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs

Ordering number ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ683 Applications Features Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source V

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