2SJ681 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ681
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 20 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2 V
Resistencia drenaje-fuente RDS(on): 0.17 Ohm
Empaquetado / Estuche: New, PWMold2
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2SJ681 Datasheet (PDF)
1.1. 2sj681 100301.pdf 
Size:180K _toshiba
2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit: mm Applications 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) (VGS = -10 V) 1.1 ± 0.2 High forward transfer admittance: |Yfs| = 5.0 S (typ.) 0.9 Low leakage current: I
5.1. 2sj683.pdf Size:261K _upd
Ordering number : ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ683 Applications Features • Low ON-resistance. • Load S/W Applicaions. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source V
5.2. 2sj687-zk.pdf Size:269K _upd
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.3. 2sj680.pdf Size:189K _toshiba
2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V) 2SJ680 Switching Applications Unit: mm Chopper Regulator, DC/DC Converter and 6.5±0.2 Motor Drive Applications 5.2±0.2 0.6 MAX. • Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) 1.1±0.2 0.9 • High forward transfer admittance: |Yfs| = 2.0 S (typ.) 0.6 MAX • Low leakage current: ID
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