2SK1830 Todos los transistores

 ..1. Size:290K  toshiba
 2sk1830.pdf

2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA Characteristics S

 8.1. Size:84K  sanyo
 2sk1839.pdf

Ordering number EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK1839- unit mm applied sets to be made small and slim. 2057A Large yfs . [2SK1839] Enhancement type. Low ON resistance. 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3

 8.2. Size:82K  renesas
 2sk1837.pdf

2SK1837 Silicon N Channel MOS FET REJ03G0979-0200 (Previous ADE-208-1326) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name TO-3PL) D G

 8.3. Size:89K  renesas
 2sk1838.pdf

2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Package code PRSS0004ZD-C (Pack

 8.4. Size:95K  renesas
 rej03g0977 2sk1832ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:102K  renesas
 rej03g0980 2sk1838lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:81K  renesas
 2sk1835.pdf

2SK1835 Silicon N Channel MOS FET REJ03G0978-0300 (Previous ADE-208-1325) Rev.3.00 Apr 27, 2006 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D

 8.7. Size:118K  renesas
 rej03g0978 2sk1835ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:82K  renesas
 2sk1832.pdf

2SK1832 Silicon N Channel MOS FET REJ03G0977-0200 (Previous ADE-208-1324) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D

 8.9. Size:34K  panasonic
 2sk1833.pdf

Power F-MOS FETs 2SK1833 2SK1833 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed EAS > 90mJ 5.5 0.2 2.7 0.2 VGSS= 30V guaranteed High-speed switching tf= 30ns 3.1 0.1 No secondary breakdown Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control

 8.10. Size:32K  panasonic
 2sk1834.pdf

Power F-MOS FETs 2SK1834 2SK1834 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed EAS > 15mJ 5.5 0.2 2.7 0.2 VGSS= 30V guaranteed High-speed switching tf = 25ns 3.1 0.1 No secondary breakdown Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Contro

 8.11. Size:28K  hitachi
 2sk1831 2sk1832.pdf

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage K1831 VDSS 450 V K1832 500 G

 8.12. Size:56K  no
 2sk1836 2sk1837.pdf

 8.13. Size:215K  inchange semiconductor
 2sk1833.pdf

isc N-Channel MOSFET Transistor 2SK1833 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Diving circuit for a solenoid and motor Control equipment Switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.14. Size:208K  inchange semiconductor
 2sk1837.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor 2SK1837 FEATURES With TO-3PL package Low input capacitance and gate charge High speed switching Low gate input resistance No secondary breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power

 8.15. Size:216K  inchange semiconductor
 2sk1834.pdf

isc N-Channel MOSFET Transistor 2SK1834 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Diving circuit for a solenoid and motor Control equipment Switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO