2SK2034 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2034
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 9.3 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
Búsqueda de reemplazo de 2SK2034 MOSFET
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2SK2034 datasheet
2sk2034.pdf
2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage. V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JE
2sk2036.pdf
2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit J
2sk2038.pdf
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2sk2035.pdf
2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit M
Otros transistores... 2SK1489 , 2SK1826 , 2SK1827 , 2SK1828 , 2SK1829 , 2SK1830 , 2SK2009 , 2SK2033 , 4435 , 2SK2035 , 2SK2036 , 2SK2037 , 2SK2601 , 2SK2602 , 2SK2606 , 2SK2607 , 2SK2613 .
History: JMSL1040AU | FQD1N80 | AOD442 | VSP007N07MS
History: JMSL1040AU | FQD1N80 | AOD442 | VSP007N07MS
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