2SK2036 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2036
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 16 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Encapsulados: SOT346
SC59
SMINI
Búsqueda de reemplazo de 2SK2036 MOSFET
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2SK2036 datasheet
..1. Size:325K toshiba
2sk2036.pdf 
2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit J
8.1. Size:198K toshiba
2sk2038.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:294K toshiba
2sk2035.pdf 
2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit M
8.5. Size:398K toshiba
2sk2034.pdf 
2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage. V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JE
8.6. Size:298K toshiba
2sk2037.pdf 
2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JEDE
8.7. Size:295K toshiba
2sk2033.pdf 
2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JED
8.8. Size:31K panasonic
2sk2032.pdf 
Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 200mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 90ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9
8.9. Size:1082K kexin
2sk2033-3.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 RDS(ON) 12 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou
8.10. Size:830K kexin
2sk2033.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 +0.1 RDS(ON) 12 (VGS = 2.5V) +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source
8.11. Size:219K inchange semiconductor
2sk2038.pdf 
isc N-Channel MOSFET Transistor 2SK2038 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
8.12. Size:219K inchange semiconductor
2sk2039.pdf 
isc N-Channel MOSFET Transistor 2SK2039 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
Otros transistores... 2SK1827
, 2SK1828
, 2SK1829
, 2SK1830
, 2SK2009
, 2SK2033
, 2SK2034
, 2SK2035
, SKD502T
, 2SK2037
, 2SK2601
, 2SK2602
, 2SK2606
, 2SK2607
, 2SK2613
, 2SK2615
, 2SK2699
.
History: SGM2305A
| HM1404D
| 2SK3109-ZJ