2SK2601 Todos los transistores

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2SK2601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2601

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Corriente continua de drenaje (Id): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1 Ohm

Empaquetado / Estuche: SC65_TO3P

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2SK2601 Datasheet (PDF)

1.1. 2sk2601.pdf Size:412K _toshiba

2SK2601
2SK2601

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2601 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.75 ? (typ.) (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I

4.1. 2sk260.pdf Size:52K _update

2SK2601
2SK2601

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK260 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400

4.2. 2sk259h 2sk260h.pdf Size:160K _update

2SK2601
2SK2601



4.3. 2sk2604.pdf Size:404K _toshiba

2SK2601
2SK2601

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2604 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum

4.4. 2sk2602.pdf Size:407K _toshiba

2SK2601
2SK2601

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2602 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 0.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum R

4.5. 2sk2605.pdf Size:411K _toshiba

2SK2601
2SK2601

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2605 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 ? (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum

4.6. 2sk2603.pdf Size:410K _toshiba

2SK2601
2SK2601

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2603 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 3.0 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

4.7. 2sk2606.pdf Size:147K _toshiba

2SK2601
2SK2601

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2606 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.0 ? (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 640 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

4.8. 2sk2607.pdf Size:413K _toshiba

2SK2601
2SK2601

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2607 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.0 ? (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

4.9. 2sk2608.pdf Size:413K _toshiba

2SK2601
2SK2601

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 3.73 ? (typ.) (ON) High forward transfer admittance : |Y | 2.6 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximu

Otros transistores... 2SK1829 , 2SK1830 , 2SK2009 , 2SK2033 , 2SK2034 , 2SK2035 , 2SK2036 , 2SK2037 , CEP83A3 , 2SK2602 , 2SK2606 , 2SK2607 , 2SK2613 , 2SK2615 , 2SK2699 , 2SK2719 , 2SK2823 .

 


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