2SK2699 Todos los transistores

 

2SK2699 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2699
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: SC65 TO3P
 

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2SK2699 datasheet

 ..1. Size:419K  toshiba
 2sk2699.pdf pdf_icon

2SK2699

2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2699 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.5 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS

 8.1. Size:418K  toshiba
 2sk2698.pdf pdf_icon

2SK2699

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2698 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.35 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10

 8.2. Size:226K  fuji
 2sk2690-01.pdf pdf_icon

2SK2699

FUJI POWER MOSFET 2SK2690-01 200511 N-CHANNEL SILICON POWER MOSFET FAP-IIIB Series Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings Drain(

 8.3. Size:281K  fuji
 2sk2691-01r.pdf pdf_icon

2SK2699

2SK2691-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching TO-3PF Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C unless

MOSTRAR MÁS

Otros transistores... 2SK2036 , 2SK2037 , 2SK2601 , 2SK2602 , 2SK2606 , 2SK2607 , 2SK2613 , 2SK2615 , AON6380 , 2SK2719 , 2SK2823 , 2SK2824 , 2SK2825 , 2SK2847 , 2SK2865 , 2SK2917 , 2SK2953 .

 

 
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