2SK2699 Todos los transistores

 

2SK2699 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2699

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 600 V

Corriente continua de drenaje (Id): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 58 nC

Resistencia drenaje-fuente RDS(on): 0.65 Ohm

Empaquetado / Estuche: SC65_TO3P

Búsqueda de reemplazo de MOSFET 2SK2699

 

2SK2699 Datasheet (PDF)

1.1. 2sk2699.pdf Size:419K _toshiba

2SK2699
2SK2699

2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2699 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.5 ? (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 1

4.1. 2sk2690-01.pdf Size:226K _update

2SK2699
2SK2699

FUJI POWER MOSFET 2SK2690-01 200511 N-CHANNEL SILICON POWER MOSFET FAP-IIIB Series Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings Drain(

4.2. 2sk2691-01r.pdf Size:281K _update

2SK2699
2SK2699

2SK2691-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching TO-3PF Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless

 4.3. 2sk2698.pdf Size:418K _toshiba

2SK2699
2SK2699

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2698 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.35 ? (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V,

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


2SK2699
  2SK2699
  2SK2699
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |

 

 

 
Back to Top