2SK3132 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3132 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3132

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 4200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: TO3P

Búsqueda de reemplazo de 2SK3132 MOSFET

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2SK3132 datasheet

..1. Size:418K toshiba
2sk3132.pdf pdf_icon

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3132 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.07 (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 3.4 V (VDS

..2. Size:284K inchange semiconductor
2sk3132.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3132 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

8.1. Size:215K 1
2sk312 2sk313.pdf pdf_icon

8.2. Size:193K toshiba
2sk3130.pdf pdf_icon

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3130 Switching Regulator Applications Unit mm Reverse-recovery time trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance RDS (ON) = 1.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =

8.3. Size:713K toshiba
2sk3131.pdf pdf_icon

2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3131 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Fast reverse recovery time trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 0.085 (typ.) High forward transfer admittance Yfs = 35 S (typ.) Low l

8.4. Size:101K renesas
rej03g1068 2sk3136ds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.5. Size:87K renesas
2sk3136.pdf pdf_icon

2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 (Previous ADE-208-696B) Rev.4.00 Sep 20, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

8.6. Size:108K renesas
rej03g1066 2sk3134lsds.pdf pdf_icon

8.7. Size:94K renesas
2sk3135.pdf pdf_icon

2SK3135(L), 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous ADE-208-695B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

8.8. Size:94K renesas
2sk3134.pdf pdf_icon

2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous ADE-208-721B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

8.9. Size:108K renesas
rej03g1067 2sk3135lsds.pdf pdf_icon

8.10. Size:25K hitachi
2sk3133.pdf pdf_icon

2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features Low on-resistance RDS(on) = 7 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Ab

8.11. Size:279K inchange semiconductor
2sk3130.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3130 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

8.12. Size:299K inchange semiconductor
2sk313.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK313 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

8.13. Size:288K inchange semiconductor
2sk3136.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3136 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =5.8 m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

8.14. Size:282K inchange semiconductor
2sk3134l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3134L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

8.15. Size:282K inchange semiconductor
2sk3133l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3133L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@ VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

8.16. Size:356K inchange semiconductor
2sk3133s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3133S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @VDS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

8.17. Size:283K inchange semiconductor
2sk3131.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3131 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.11 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

8.18. Size:329K inchange semiconductor
2sk3135s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3135S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

8.19. Size:356K inchange semiconductor
2sk3134s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3134S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

8.20. Size:282K inchange semiconductor
2sk3135l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3135L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

Otros transistores... 2SK2962 , 2SK2963 , 2SK2964 , 2SK2968 , 2SK2989 , 2SK2992 , 2SK2998 , 2SK3017 , SI2302 , 2SK3301 , 2SK3371 , 2SK3373 , 2SK3438 , 2SK3453 , 2SK3466 , 2SK3471 , 2SK3472 .