2SK3742 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3742

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO220SIS

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2SK3742 datasheet

 ..1. Size:219K  toshiba
2sk3742.pdf pdf_icon

2SK3742

2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3742 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement model Vth = 4.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim

 ..2. Size:240K  inchange semiconductor
2sk3742.pdf pdf_icon

2SK3742

isc N-Channel MOSFET Transistor 2SK3742 I2SK3742 FEATURES Low drain-source on-resistance RDS(on) 2.5 . Enhancement mode Vth = 4.0 to 5.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.1. Size:296K  toshiba
2sk3743.pdf pdf_icon

2SK3742

2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3743 Unit mm Switching Regulator Applications Low drain-source ON resistance RDS (ON) = 0.29 (typ.) High forward transfer admittance Yfs = 5.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 450 V) Enhancement-mode Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolut

 8.2. Size:51K  sanyo
2sk3745ls.pdf pdf_icon

2SK3742

Ordering number EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Param

Otros transistores... 2SK3544, 2SK3564, 2SK3565, 2SK3566, 2SK3633, 2SK3658, 2SK3670, 2SK3700, IRF830, 2SK3754, 2SK3757, 2SK3766, 2SK3767, 2SK3798, 2SK3799, 2SK3842, 2SK3843