2SK3757 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3757 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute

2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) 2SK3759 unit Switching Regulator Applications Low drain-source ON resistance: R = 0.75 (typ.) DS (ON) High forward transfer admittance: |Y | = 6.5S (typ.) fs4.7max4.7 max 10.5 max 10.5 max Low leakage current: I = 100 A (V = 500 V) 3.840.2 DSS DS1.3 3.840.2

2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high Unit: mmfrequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3754 Relay Drive, DC-DC Converter and Unit: mmMotor Drive Applications 4.5-V gate drive Low drain-source ON resistance: RDS (ON) = 71 m (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-model: V

2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) 2SK3758 unit Switching Regulator Applications 4.7max4.7 max 10.5 max 10.5max Low drain-source ON resistance: R = 1.35 (typ.) 3.840.2 DS (ON)3.840.2 1.3 1.3 High forward transfer admittance: |Y | = 3.5S (typ.) fs Low leakage current: I = 100 A (V = 500 V) DSS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3753-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit

isc N-Channel MOSFET Transistor 2SK3759FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 850m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK375LFEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK375SFEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3755FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid