2SK3766 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3766 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolut

2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) 2SK3761 unit Switching Regulator Applications 4.7max4.7 max 10.5 max 10.5max 3.840.2 1.3 3.840.2 1.3 Low drain-source ON resistance: R = 0.9 (typ.) DS (ON) High forward transfer admittance: |Y | = 5.0S (typ.) fs Low leakage current: I = 100 A (V = 600 V)

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3767 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings

2SK3769-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25

isc N-Channel MOSFET Transistor 2SK3767FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno