2SK3766 Todos los transistores

 ..1. Size:274K  toshiba
 2sk3766.pdf

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3766 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Yfs = 0.65 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 3.5 4.5 V (VDS = 10 V, ID = 1 mA) Absolut

 8.1. Size:89K  toshiba
 2sk3761.pdf

2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3761 unit Switching Regulator Applications 4.7max 4.7 max 10.5 max 10.5max 3.84 0.2 1.3 3.84 0.2 1.3 Low drain-source ON resistance R = 0.9 (typ.) DS (ON) High forward transfer admittance Y = 5.0S (typ.) fs Low leakage current I = 100 A (V = 600 V)

 8.2. Size:228K  toshiba
 2sk3767.pdf

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3767 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.3 (typ.) High forward transfer admittance Yfs = 1.6S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings

 8.3. Size:98K  fuji
 2sk3769-01mr.pdf

2SK3769-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25

 8.4. Size:279K  inchange semiconductor
 2sk3767.pdf

isc N-Channel MOSFET Transistor 2SK3767 FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno