2SK3799 Todos los transistores

 ..1. Size:221K  toshiba
 2sk3799.pdf

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3799 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement model V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Max

 ..2. Size:240K  inchange semiconductor
 2sk3799.pdf

isc N-Channel MOSFET Transistor 2SK3799 I2SK3799 FEATURES Low drain-source on-resistance RDS(on) 1.3 . Enhancement mode Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.1. Size:184K  toshiba
 2sk3797.pdf

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3797 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

 8.2. Size:222K  toshiba
 2sk3798.pdf

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3798 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.5 (typ.) High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement-mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings

 8.3. Size:151K  nec
 2sk3794.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. TO-251 (MP-3) 2SK3794 TO-252 (MP-3Z) 2SK3794-Z FEATURES Low On-state resistance (TO-251) RDS(on)1 = 44 m MAX. (VGS = 10

 8.4. Size:175K  nec
 2sk3793.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3793 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3793 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3793 Isolated TO-220 FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A)

 8.5. Size:1013K  onsemi
 2sk3796.pdf

Ordering number EN8636B 2SK3796 N-Channel JFET http //onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, SMCP Applications Low-frequency general-purpose amplifier, impedance conversion, analog switches applications Features Small IGSS Small Ciss Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 30 V Gate-to-Dr

 8.6. Size:279K  inchange semiconductor
 2sk3797.pdf

isc N-Channel MOSFET Transistor 2SK3797 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.7. Size:273K  inchange semiconductor
 2sk3793.pdf

isc N-Channel MOSFET Transistor 2SK3793 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.8. Size:240K  inchange semiconductor
 2sk3798.pdf

isc N-Channel MOSFET Transistor 2SK3798 I2SK3798 FEATURES Low drain-source on-resistance RDS(on) 3.5 . Enhancement mode Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER