2SK4017 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.07 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS

isc N-Channel MOSFET Transistor 2SK4017FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4015 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4016 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V

2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.17 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (ty

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK4013 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.28 (typ.) High forward transfer admittance : |Yfs|

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isc N-Channel MOSFET Transistor 2SK4015FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.86(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4016FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK4014I2SK4014FEATURESLow drain-source on-resistance:RDS(on) 2.0.Enhancement mode:Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converter, Relay Drive and Motor DriveApplicationsABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor 2SK4019FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.23(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

iscN-Channel MOSFET Transistor 2SK4013FEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor 2SK4012FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK4018FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK401FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid