2SK4023 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4023
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7 nS
Cossⓘ - Capacitancia de salida: 20 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.6 Ohm
Encapsulados: NEW PWMOLD2
Búsqueda de reemplazo de 2SK4023 MOSFET
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2SK4023 datasheet
..1. Size:215K toshiba
2sk4023.pdf 
2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4023 Switching Regulator, DC/DC Converter Unit mm MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 4.0 (typ.) High forward transfer admittance Yfs = 0.8 S (typ.) Low leakage current ID
..2. Size:354K inchange semiconductor
2sk4023.pdf 
isc N-Channel MOSFET Transistor 2SK4023 FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 4.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.1. Size:767K toshiba
2sk4020.pdf 
2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Yfs = 4.5
8.2. Size:271K toshiba
2sk4021.pdf 
2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4021 Switching Regulator and DC/DC Converter Applications Unit mm Motor Drive Applications MAX Low drain-source ON-resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.)
8.3. Size:210K toshiba
2sk4026.pdf 
2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4026 Switching Regulator Applications Unit mm MAX Features Low drain-source ON-resistance RDS (ON) = 6.4 (typ.) High forward transfer admittance Yfs = 0.85 S (typ.) Low leakage current IDSS
8.4. Size:208K toshiba
2sk4022.pdf 
2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Unit mm Motor Drive Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.2 S (typ
8.5. Size:156K nec
2sk4027.pdf 
DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK4027 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK4027 is suitable for converter of ECM. +0.1 +0.1 0.4 0.05 0.16 0.06 FEATURES High gain Marking -1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k ) Low noise 3 -
8.7. Size:354K inchange semiconductor
2sk4020.pdf 
isc N-Channel MOSFET Transistor 2SK4020 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.8. Size:354K inchange semiconductor
2sk4021.pdf 
isc N-Channel MOSFET Transistor 2SK4021 FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.9. Size:354K inchange semiconductor
2sk4026.pdf 
isc N-Channel MOSFET Transistor 2SK4026 FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.10. Size:353K inchange semiconductor
2sk4022.pdf 
isc N-Channel MOSFET Transistor 2SK4022 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.11. Size:234K inchange semiconductor
2sk402.pdf 
isc N-Channel MOSFET Transistor 2SK402 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching reg
Otros transistores... 2SK3845, 2SK3878, 2SK3880, 2SK3940, 2SK4003, 2SK4013, 2SK4014, 2SK4017, IRF740, 2SK4026, 2SK4033, 2SK4034, 2SK4115, 2SK4207, HN1J02FU, HN1K02FU, HN1K03FU