HN1K03FU Todos los transistores

 

HN1K03FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1K03FU

Código: KP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 12 Ohm

Empaquetado / Estuche: SOT363_SC88_US6

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HN1K03FU Datasheet (PDF)

1.1. hn1k03fu 071101.pdf Size:296K _toshiba

HN1K03FU
HN1K03FU

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mm High Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage : V = 0.5V~1.5V th Excellent switching times : t = 0.16?s (typ.) on t = 0.15?s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25°C) (Q1

5.1. hn1k06fu 071101.pdf Size:161K _toshiba

HN1K03FU
HN1K03FU

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit: mm Analog Switch Applications • High input impedance and extremely low drive current. • Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V • Switching speed is fast. • Suitable for high-density mounting because of

5.2. hn1k05fu 071101.pdf Size:159K _toshiba

HN1K03FU
HN1K03FU

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit: mm High Speed Switching Applications Interface Applications • High input impedance and extremely low drive current. • Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V • Suitable for high-density mounting because of a compact pa

 5.3. hn1k04fu 071101.pdf Size:160K _toshiba

HN1K03FU
HN1K03FU

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit: mm Analog Switch Applications • High input impedance and extremely low drive current. • Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V • Switching speed is fast. • Suitable for high-density mounting because of

5.4. hn1k02fu 071101.pdf Size:302K _toshiba

HN1K03FU
HN1K03FU

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mm Analog Switch Applications 2.5 V gate drive. Low threshold voltage: V = 0.5V~1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-Source voltage VD

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