SSM3J108TU
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3J108TU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8
V
|Id|ⓘ - Corriente continua de drenaje: 1.8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 45
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.158
Ohm
Paquete / Cubierta:
UFM
- Selección de transistores por parámetros
SSM3J108TU
Datasheet (PDF)
..1. Size:147K toshiba
ssm3j108tu.pdf 
SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V driveUnit: mm Low on-resistance: Ron = 363m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) 2.10.1Ron = 158m (max) (@VGS = -4.0 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-So
7.1. Size:205K toshiba
ssm3j109tu.pdf
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8 V drive 2.10.1 Low ON-resistance: Ron = 300 m (max) (@VGS = -1.8 V) 1.70.1Ron = 172 m (max) (@VGS = -2.5 V) Ron = 130 m (max) (@VGS = -4.0 V) 1Absolute Maximum Ratings (Ta = 25
8.1. Size:180K toshiba
ssm3j16fv.pdf
SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25C) 0.80.05
8.2. Size:144K toshiba
ssm3j115tu.pdf
SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit: mm2.10.1 1.5 V drive 1.70.1 Low ON-resistance: Ron = 353 m (max) (@VGS = -1.5 V) Ron = 193 m (max) (@VGS = -1.8 V) Ron = 125 m (max) (@VGS = -2.5 V) 1Ron = 98 m (max) (@VGS = -4.0 V) 3Ab
8.3. Size:202K toshiba
ssm3j134tu.pdf
SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J134TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance: RDS(ON) = 240 m (max) (@VGS = -1.5 V) RDS(ON) = 168 m (max) (@VGS = -1.8 V) RDS(ON) = 123 m (max) (@VGS = -2.5 V) RDS(ON) = 93 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25
8.4. Size:208K toshiba
ssm3j132tu.pdf
SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J132TU Power Management Switch Applications 1.2-V driveUnit: mm Low ON-resistance: RDS(ON) = 94 m (max) (@VGS = -1.2 V) RDS(ON) = 39 m (max) (@VGS = -1.5 V) RDS(ON) = 29 m (max) (@VGS = -1.8 V) RDS(ON) = 21 m (max) (@VGS = -2.5 V) RDS(ON) = 17 m (max) (@VGS = -4.5
8.5. Size:147K toshiba
ssm3j110tu.pdf
SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V driveUnit: mm Low on-resistance: Ron = 240m (max) (@VGS = -1.8 V) Ron = 145m (max) (@VGS = -2.5 V) 2.10.1Ron = 94m (max) (@VGS = -4.0 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Sou
8.6. Size:186K toshiba
ssm3j15fs.pdf
SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
8.7. Size:178K toshiba
ssm3j120tu.pdf
SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU Power Management Switch Applications High-Current Switching Applications Unit: mm 1.5 V drive Low on-resistance2.10.1Ron = 140 m (max) (@VGS = -1.5 V) Ron = 78 m (max) (@VGS = -1.8 V) 1.70.1Ron = 49 m (max) (@VGS = -2.5 V) Ron = 38 m (max) (@VGS = -4.0 V) 1
8.8. Size:133K toshiba
ssm3j113tu.pdf
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V driveUnit: mm Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) 2.10.1Ron = 249m (max) (@VGS = -2.5 V) 1.70.1Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-
8.9. Size:186K toshiba
ssm3j130tu.pdf
SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance:RDS(ON) = 63.2 m (max) (@VGS = -1.5 V) RDS(ON) = 41.1 m (max) (@VGS = -1.8 V) 2.10.1RDS(ON) = 31.0 m (max) (@VGS = -2.5 V) 1.70.1RDS(ON) = 25.8 m (max) (@VGS = -4.5 V) 1Absolu
8.10. Size:226K toshiba
ssm3j15fu.pdf
SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
8.11. Size:136K toshiba
ssm3j118tu.pdf
SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive Unit: mm Low ON-resistance: Ron = 480 m (max) (@VGS = -4 V) 2.10.1Ron = 240 m (max) (@VGS = -10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit1Drainsource voltage VDS -30 V32Gatesour
8.12. Size:178K toshiba
ssm3j114tu.pdf
SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5 V drive 2.10.1 Low on-resistanceRon = 526 m (max) (@ VGS = -1.5 V) 1.70.1 Ron = 321 m (max) (@ VGS = -1.8 V) Ron = 199 m (max) (@ VGS = -2.5 V) 1Ron = 149 m (max) (@ VGS = -
8.13. Size:186K toshiba
ssm3j129tu.pdf
SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J129TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit: mm Low ON-resistance Ron = 137m (max) (@VGS = -1.5 V) Ron = 88m (max) (@VGS = -1.8 V) 2.10.1Ron = 62m (max) (@VGS = -2.5 V) 1.70.1Ron = 46m (max) (@VGS = -4.5 V) 1
8.14. Size:220K toshiba
ssm3j14t.pdf
SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Management Switch Unit: mmDC-DC Converters Suitable for high-density mounting due to compact package Low on Resistance: Ron = 145 m (max) (@VGS = -4.5 V) : Ron = 85 m (max) (@VGS = -10 V) High-speed switching Absolute Maximum Ratings (Ta = 25C) Characteristics
8.15. Size:203K toshiba
ssm3j133tu.pdf
SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J133TU Power Management Switch Applications Unit: mm 1.5V drive2.10.1 Low ON-resistance: RDS(ON) = 88.4 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS = -1.8 V) 1.70.1RDS(ON) = 39.7 m (max) (@VGS = -2.5 V) RDS(ON) = 29.8 m (max) (@VGS = -4.5 V) 132Absolut
8.16. Size:184K toshiba
ssm3j15te.pdf
SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
8.17. Size:199K toshiba
ssm3j13t.pdf
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 70 m (max) (@VGS = -4 V) : Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDr
8.18. Size:111K toshiba
ssm3j117tu.pdf
SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) 2.10.1Ron = 117 m (max) (@VGS = -10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit1Drainsource voltage VDS -30 V32Gatesour
8.19. Size:203K toshiba
ssm3j16ct.pdf
SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm0.60.05 Small package 0.50.03 Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25
8.20. Size:175K toshiba
ssm3j15f.pdf
SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.5 Low ON resistance : Ron = 12 (max) (@VGS = -4 V) 2.5-0.3+0.25 : Ron = 32 (max) (@VGS = -2.5 V) 1.5-0.15Absolute Maximum Ratings (Ta = 25C) 12 3Characteristics Symbol Rating UnitDrain-Sou
8.21. Size:222K toshiba
ssm3j16fu.pdf
SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol
8.22. Size:144K toshiba
ssm3j15fv.pdf
SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance : RDS(ON) = 12 (max) (@VGS = -4 V) : RDS(ON) = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1.20.050.80.05Characterist
8.23. Size:185K toshiba
ssm3j16fs.pdf
SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol
8.24. Size:180K toshiba
ssm3j16te.pdf
SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : Ron = 8 (max) (@VGS = -4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-So
8.25. Size:189K toshiba
ssm3j135tu.pdf
SSM3J135TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J135TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance:RDS(ON) = 260 m (max) (@VGS = -1.5 V) RDS(ON) = 180 m (max) (@VGS = -1.8 V) RDS(ON) = 132 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25
8.26. Size:159K toshiba
ssm3j15ct.pdf
SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages Low ON-resistance : Ron = 12 (max) (@VGS = -4 V) 0.60.05: Ron = 32 (max) (@VGS = -2.5 V) 0.50.03Absolute Maximum Ratings (Ta = 25C) Characteristics Sy
8.28. Size:136K toshiba
ssm3j112tu.pdf
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive2.10.1 Low on-resistance: Ron = 790m (max) (@VGS = -4 V) 1.70.1Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Source voltage VDS -30 VGate-Source volta
8.29. Size:255K toshiba
ssm3j111tu.pdf
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol
8.30. Size:921K cn vbsemi
ssm3j14t.pdf
SSM3J14Twww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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History: CSD25301W1015
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