SSM3J14T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3J14T
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 2.7
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 113
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085
Ohm
Paquete / Cubierta:
TSM
Búsqueda de reemplazo de MOSFET SSM3J14T
Principales características: SSM3J14T
..1. Size:220K toshiba
ssm3j14t.pdf 
SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Management Switch Unit mm DC-DC Converters Suitable for high-density mounting due to compact package Low on Resistance Ron = 145 m (max) (@VGS = -4.5 V) Ron = 85 m (max) (@VGS = -10 V) High-speed switching Absolute Maximum Ratings (Ta = 25 C) Characteristics
..2. Size:921K cn vbsemi
ssm3j14t.pdf
SSM3J14T www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23
8.1. Size:180K toshiba
ssm3j16fv.pdf
SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit mm Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) 0.8 0.05
8.2. Size:205K toshiba
ssm3j109tu.pdf
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8 V drive 2.1 0.1 Low ON-resistance Ron = 300 m (max) (@VGS = -1.8 V) 1.7 0.1 Ron = 172 m (max) (@VGS = -2.5 V) Ron = 130 m (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25
8.3. Size:144K toshiba
ssm3j115tu.pdf
SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit mm 2.1 0.1 1.5 V drive 1.7 0.1 Low ON-resistance Ron = 353 m (max) (@VGS = -1.5 V) Ron = 193 m (max) (@VGS = -1.8 V) Ron = 125 m (max) (@VGS = -2.5 V) 1 Ron = 98 m (max) (@VGS = -4.0 V) 3 Ab
8.4. Size:202K toshiba
ssm3j134tu.pdf
SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J134TU Power Management Switch Applications 1.5 V drive Unit mm Low ON-resistance RDS(ON) = 240 m (max) (@VGS = -1.5 V) RDS(ON) = 168 m (max) (@VGS = -1.8 V) RDS(ON) = 123 m (max) (@VGS = -2.5 V) RDS(ON) = 93 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25
8.5. Size:208K toshiba
ssm3j132tu.pdf
SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J132TU Power Management Switch Applications 1.2-V drive Unit mm Low ON-resistance RDS(ON) = 94 m (max) (@VGS = -1.2 V) RDS(ON) = 39 m (max) (@VGS = -1.5 V) RDS(ON) = 29 m (max) (@VGS = -1.8 V) RDS(ON) = 21 m (max) (@VGS = -2.5 V) RDS(ON) = 17 m (max) (@VGS = -4.5
8.6. Size:147K toshiba
ssm3j110tu.pdf
SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V drive Unit mm Low on-resistance Ron = 240m (max) (@VGS = -1.8 V) Ron = 145m (max) (@VGS = -2.5 V) 2.1 0.1 Ron = 94m (max) (@VGS = -4.0 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Sou
8.7. Size:186K toshiba
ssm3j15fs.pdf
SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v
8.8. Size:178K toshiba
ssm3j120tu.pdf
SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU Power Management Switch Applications High-Current Switching Applications Unit mm 1.5 V drive Low on-resistance 2.1 0.1 Ron = 140 m (max) (@VGS = -1.5 V) Ron = 78 m (max) (@VGS = -1.8 V) 1.7 0.1 Ron = 49 m (max) (@VGS = -2.5 V) Ron = 38 m (max) (@VGS = -4.0 V) 1
8.9. Size:133K toshiba
ssm3j113tu.pdf
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Unit mm Low on-resistance Ron = 449m (max) (@VGS = -2.0 V) 2.1 0.1 Ron = 249m (max) (@VGS = -2.5 V) 1.7 0.1 Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-
8.10. Size:186K toshiba
ssm3j130tu.pdf
SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit mm Low ON-resistance RDS(ON) = 63.2 m (max) (@VGS = -1.5 V) RDS(ON) = 41.1 m (max) (@VGS = -1.8 V) 2.1 0.1 RDS(ON) = 31.0 m (max) (@VGS = -2.5 V) 1.7 0.1 RDS(ON) = 25.8 m (max) (@VGS = -4.5 V) 1 Absolu
8.11. Size:226K toshiba
ssm3j15fu.pdf
SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v
8.12. Size:136K toshiba
ssm3j118tu.pdf
SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive Unit mm Low ON-resistance Ron = 480 m (max) (@VGS = -4 V) 2.1 0.1 Ron = 240 m (max) (@VGS = -10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1 Drain source voltage VDS -30 V 3 2 Gate sour
8.13. Size:178K toshiba
ssm3j114tu.pdf
SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5 V drive 2.1 0.1 Low on-resistance Ron = 526 m (max) (@ VGS = -1.5 V) 1.7 0.1 Ron = 321 m (max) (@ VGS = -1.8 V) Ron = 199 m (max) (@ VGS = -2.5 V) 1 Ron = 149 m (max) (@ VGS = -
8.14. Size:186K toshiba
ssm3j129tu.pdf
SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J129TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit mm Low ON-resistance Ron = 137m (max) (@VGS = -1.5 V) Ron = 88m (max) (@VGS = -1.8 V) 2.1 0.1 Ron = 62m (max) (@VGS = -2.5 V) 1.7 0.1 Ron = 46m (max) (@VGS = -4.5 V) 1
8.15. Size:203K toshiba
ssm3j133tu.pdf
SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J133TU Power Management Switch Applications Unit mm 1.5V drive 2.1 0.1 Low ON-resistance RDS(ON) = 88.4 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS = -1.8 V) 1.7 0.1 RDS(ON) = 39.7 m (max) (@VGS = -2.5 V) RDS(ON) = 29.8 m (max) (@VGS = -4.5 V) 1 3 2 Absolut
8.16. Size:184K toshiba
ssm3j15te.pdf
SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v
8.17. Size:199K toshiba
ssm3j13t.pdf
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch Unit mm High Speed Switching Applications Small Package Low on Resistance Ron = 70 m (max) (@VGS = -4 V) Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dr
8.18. Size:111K toshiba
ssm3j117tu.pdf
SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive Unit mm Low ON-resistance Ron = 225 m (max) (@VGS = -4 V) 2.1 0.1 Ron = 117 m (max) (@VGS = -10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1 Drain source voltage VDS -30 V 3 2 Gate sour
8.20. Size:175K toshiba
ssm3j15f.pdf
SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit mm Small package +0.5 Low ON resistance Ron = 12 (max) (@VGS = -4 V) 2.5-0.3 +0.25 Ron = 32 (max) (@VGS = -2.5 V) 1.5-0.15 Absolute Maximum Ratings (Ta = 25 C) 1 2 3 Characteristics Symbol Rating Unit Drain-Sou
8.21. Size:222K toshiba
ssm3j16fu.pdf
SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol
8.22. Size:144K toshiba
ssm3j15fv.pdf
SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Unit mm Low on-resistance RDS(ON) = 12 (max) (@VGS = -4 V) RDS(ON) = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) 1.2 0.05 0.8 0.05 Characterist
8.23. Size:185K toshiba
ssm3j16fs.pdf
SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol
8.24. Size:180K toshiba
ssm3j16te.pdf
SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance Ron = 8 (max) (@VGS = -4 V) Ron = 12 (max) (@VGS = -2.5 V) Ron = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-So
8.26. Size:147K toshiba
ssm3j108tu.pdf
SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V drive Unit mm Low on-resistance Ron = 363m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) 2.1 0.1 Ron = 158m (max) (@VGS = -4.0 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-So
8.27. Size:159K toshiba
ssm3j15ct.pdf
SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Unit mm Optimum for high-density mounting in small packages Low ON-resistance Ron = 12 (max) (@VGS = -4 V) 0.6 0.05 Ron = 32 (max) (@VGS = -2.5 V) 0.5 0.03 Absolute Maximum Ratings (Ta = 25 C) Characteristics Sy
8.29. Size:136K toshiba
ssm3j112tu.pdf
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit mm 4V drive 2.1 0.1 Low on-resistance Ron = 790m (max) (@VGS = -4 V) 1.7 0.1 Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source volta
8.30. Size:255K toshiba
ssm3j111tu.pdf
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit mm 2.5V drive 2.1 0.1 Low on-resistance Ron = 480m (max) (@VGS = -4 V) 1.7 0.1 Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source vol
Otros transistores... SSM3J120TU
, SSM3J129TU
, SSM3J130TU
, SSM3J132TU
, SSM3J133TU
, SSM3J134TU
, SSM3J135TU
, SSM3J13T
, SKD502T
, SSM3J15CT
, SSM3J15FS
, SSM3J15FU
, SSM3J15FV
, SSM3J15F
, SSM3J16CT
, SSM3J16FS
, SSM3J16FU
.
