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SSM3J14T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3J14T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 113 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TSM
 

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SSM3J14T Datasheet (PDF)

 ..1. Size:220K  toshiba
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SSM3J14T

SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Management Switch Unit: mmDC-DC Converters Suitable for high-density mounting due to compact package Low on Resistance: Ron = 145 m (max) (@VGS = -4.5 V) : Ron = 85 m (max) (@VGS = -10 V) High-speed switching Absolute Maximum Ratings (Ta = 25C) Characteristics

 ..2. Size:921K  cn vbsemi
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SSM3J14T

SSM3J14Twww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

 8.1. Size:180K  toshiba
ssm3j16fv.pdf pdf_icon

SSM3J14T

SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25C) 0.80.05

 8.2. Size:205K  toshiba
ssm3j109tu.pdf pdf_icon

SSM3J14T

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8 V drive 2.10.1 Low ON-resistance: Ron = 300 m (max) (@VGS = -1.8 V) 1.70.1Ron = 172 m (max) (@VGS = -2.5 V) Ron = 130 m (max) (@VGS = -4.0 V) 1Absolute Maximum Ratings (Ta = 25

Otros transistores... SSM3J120TU , SSM3J129TU , SSM3J130TU , SSM3J132TU , SSM3J133TU , SSM3J134TU , SSM3J135TU , SSM3J13T , IRF9540N , SSM3J15CT , SSM3J15FS , SSM3J15FU , SSM3J15FV , SSM3J15F , SSM3J16CT , SSM3J16FS , SSM3J16FU .

History: FW389 | FK16UM-6 | FTK50N06

 

 
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