SSM3J15FU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3J15FU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 8.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm

Encapsulados: SOT323 SC70 USM

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SSM3J15FU datasheet

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 ssm3j15fu.pdf pdf_icon

SSM3J15FU

SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v

 6.1. Size:186K  toshiba
 ssm3j15fs.pdf pdf_icon

SSM3J15FU

SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v

 6.2. Size:175K  toshiba
 ssm3j15f.pdf pdf_icon

SSM3J15FU

SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit mm Small package +0.5 Low ON resistance Ron = 12 (max) (@VGS = -4 V) 2.5-0.3 +0.25 Ron = 32 (max) (@VGS = -2.5 V) 1.5-0.15 Absolute Maximum Ratings (Ta = 25 C) 1 2 3 Characteristics Symbol Rating Unit Drain-Sou

 6.3. Size:144K  toshiba
 ssm3j15fv.pdf pdf_icon

SSM3J15FU

SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Unit mm Low on-resistance RDS(ON) = 12 (max) (@VGS = -4 V) RDS(ON) = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) 1.2 0.05 0.8 0.05 Characterist

MOSTRAR MÁS

Otros transistores... SSM3J132TU, SSM3J133TU, SSM3J134TU, SSM3J135TU, SSM3J13T, SSM3J14T, SSM3J15CT, SSM3J15FS, AON7410, SSM3J15FV, SSM3J15F, SSM3J16CT, SSM3J16FS, SSM3J16FU, SSM3J16FV, SSM3J304T, SSM3J305T