SSM3J15F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3J15F
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 8.6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
Paquete / Cubierta: SOT346 SC59 SMINI
- Selección de transistores por parámetros
SSM3J15F Datasheet (PDF)
ssm3j15f.pdf

SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.5 Low ON resistance : Ron = 12 (max) (@VGS = -4 V) 2.5-0.3+0.25 : Ron = 32 (max) (@VGS = -2.5 V) 1.5-0.15Absolute Maximum Ratings (Ta = 25C) 12 3Characteristics Symbol Rating UnitDrain-Sou
ssm3j15fs.pdf

SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
ssm3j15fu.pdf

SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
ssm3j15fv.pdf

SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance : RDS(ON) = 12 (max) (@VGS = -4 V) : RDS(ON) = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1.20.050.80.05Characterist
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK1015-01 | P5504EVG | AOT264L | NCEP080N10F | SIHFIZ14G | AP4506GEM | SRT15N059HS2
History: 2SK1015-01 | P5504EVG | AOT264L | NCEP080N10F | SIHFIZ14G | AP4506GEM | SRT15N059HS2



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