SSM3J307T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3J307T
   Código: KDP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 19 nC
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TSM

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SSM3J307T Datasheet (PDF)

..1. Size:207K toshiba
ssm3j307t.pdf

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.5 V drive 2.8-0.3 Low ON-resistance: Ron = 83 m (max) (@VGS = -1.5 V) +0.21.6-0.1Ron = 56 m (max) (@VGS = -1.8 V) Ron = 40 m (max) (@VGS = -2.5 V) Ron = 31 m (max) (@VGS = -4.

7.1. Size:173K toshiba
ssm3j306t.pdf

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) Ron = 117 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC

7.2. Size:243K toshiba
ssm3j304t.pdf

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Character

7.3. Size:173K toshiba
ssm3j305t.pdf

SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 477 m (max) (@VGS = -4 V) Ron = 237 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSH17N60A

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