SSM3J314T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3J314T Datasheet (PDF)

..1. Size:202K toshiba
ssm3j314t.pdf pdf_icon

SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications Unit: mm 4.0V drive +0.2 Low ON-resistance: Ron = 100m (max) (@VGS = -4.0 V) 2.8-0.3Ron = 54m (max) (@VGS = -10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30

7.1. Size:177K toshiba
ssm3j312t.pdf pdf_icon

SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low on-resistance: Ron = 237m (max) (@VGS = -1.8 V) +0.2Ron = 142m (max) (@VGS = -2.5 V) 2.8-0.3Ron = 91m (max) (@VGS = -4.0 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Charac

7.2. Size:211K toshiba
ssm3j317t.pdf pdf_icon

SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 m (max) (@VGS = -1.8 V) +0.22.8-0.3: Ron = 144 m (max) (@VGS = -2.8 V) +0.2: Ron = 107 m (max) (@VGS = -4.5 V) 1.6-0.1Absolute Maximum Ratings (Ta =

7.3. Size:204K toshiba
ssm3j313t.pdf pdf_icon

SSM3J313T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J313T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.8V drive 2.8-0.3 Low ON-resistance: Ron = 640m (max) (@VGS = -1.8 V) +0.21.6-0.1Ron = 396m (max) (@VGS = -2.5 V) Ron = 268m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25

Otros transistores... SSM3J16FU , SSM3J16FV , SSM3J304T , SSM3J305T , SSM3J306T , SSM3J307T , SSM3J312T , SSM3J313T , P60NF06 , SSM3J317T , SSM3J321T , SSM3J325F , SSM3J326T , SSM3J327F , SSM3J327R , SSM3J328R , SSM3J332R .