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SSM3J35MFV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3J35MFV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 10.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT723 VESM
 

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SSM3J35MFV Datasheet (PDF)

 ..1. Size:247K  toshiba
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SSM3J35MFV

SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS1 : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) o

 7.1. Size:373K  toshiba
 ssm3j358r.pdf pdf_icon

SSM3J35MFV

SSM3J358RMOSFETs Silicon P-Channel MOSSSM3J358RSSM3J358RSSM3J358RSSM3J358R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V drive(2) Low drain-source on-resistance: RDS(ON) = 49.3 m (max) (@VGS = -1.8 V) RDS(ON) = 32.8 m (max) (@VGS = -2.5 V) RDS(ON) = 27.7 m

 7.2. Size:224K  toshiba
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SSM3J35MFV

SSM3J356RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J356RSSM3J356RSSM3J356RSSM3J356R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)

 7.3. Size:228K  toshiba
 ssm3j351r.pdf pdf_icon

SSM3J35MFV

SSM3J351RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J351RSSM3J351RSSM3J351RSSM3J351R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V drive(2) Low drain-source on-resistance: RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1

MOSTRAR MÁS

Otros transistores... SSM3J326T , SSM3J327F , SSM3J327R , SSM3J328R , SSM3J332R , SSM3J334R , SSM3J35CT , SSM3J35FS , IRF530 , SSM3J36FS , SSM3J36MFV , SSM3J36TU , SSM3J46CTB , SSM3J56MFV , SSM3K01F , SSM3K01T , SSM3K02F .

History: AP4N2R6J | IPA50R190CE | AP4N1R8CMT-A | JFFM18N50C | HY3208PM | PDC2603Z | SIS488DN

 

 
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