SSM3K02F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K02F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: SOT346 SC59 SMINI

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SSM3K02F datasheet

 ..1. Size:302K  toshiba
 ssm3k02f.pdf pdf_icon

SSM3K02F

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 200 m (max) (VGS = 4 V) Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

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 ssm3k02t.pdf pdf_icon

SSM3K02F

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit mm Small package Low on resistance Ron = 200 m (max) (VGS = 4 V) Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 8.1. Size:305K  toshiba
 ssm3k01f.pdf pdf_icon

SSM3K02F

SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 120 m (max) (VGS = 4 V) Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni

 8.2. Size:312K  toshiba
 ssm3k05fu.pdf pdf_icon

SSM3K02F

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit mm Low on resistance Ron = 0.8 max (@VGS = 4 V) Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source

MOSTRAR MÁS

Otros transistores... SSM3J35MFV, SSM3J36FS, SSM3J36MFV, SSM3J36TU, SSM3J46CTB, SSM3J56MFV, SSM3K01F, SSM3K01T, 75N75, SSM3K02T, SSM3K05FU, SSM3K09FU, SSM3K101TU, SSM3K102TU, SSM3K104TU, SSM3K105TU, SSM3K106TU