SSM3K121TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3K121TU
   Código: KKB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 5.9 nC
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: UFM

Búsqueda de reemplazo de MOSFET SSM3K121TU

SSM3K121TU Datasheet (PDF)

..1. Size:165K toshiba
ssm3k121tu.pdf

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 140 m (max) (@VGS = 1.5 V) Ron = 93 m (max) (@VGS = 1.8 V) 2.10.1Ron = 63 m (max) (@VGS = 2.5 V) 1.70.1Ron = 48 m (max) (@VGS = 4.0 V) Absolu

7.1. Size:153K toshiba
ssm3k124tu .pdf

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 2.10.1Ron = 83 m (max) (@VGS = 10V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drainsource voltage VDS 30 VGatesource volta

7.2. Size:191K toshiba
ssm3k127tu.pdf

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.11.70.1 1.8V drive Low ON-resistance: Ron = 286m (max) (@VGS = 1.8V) : Ron = 167m (max) (@VGS = 2.5V) 1: Ron = 123m (max) (@VGS = 4.0V) 32Absolute Maximum Ratings (Ta = 25C

7.3. Size:314K toshiba
ssm3k124tu.pdf

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 1.70.1Ron = 83 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGateso

7.4. Size:197K toshiba
ssm3k128tu.pdf

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU High-Speed Switching Applications Power Management Switch Applications UNIT: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : Ron = 360 m (max) (@VGS = 4.0V) : Ron = 217 m (max) (@VGS = 10V) 132Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Uni

7.5. Size:166K toshiba
ssm3k123tu.pdf

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) Ron = 43 m (max) (@VGS = 1.8 V) 2.10.1Ron = 32 m (max) (@VGS = 2.5 V) 1.70.1Ron = 28 m (max) (@VGS = 4.0 V) Absol

7.6. Size:219K toshiba
ssm3k12t.pdf

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit: mmHigh Speed Switching Applications Small Package Low ON-resistance : Ron = 95 m (max) (@VGS = 10 V) : Ron = 145 m (max) (@VGS = 4.5 V) High speed : ton = 21 ns : toff = 16 ns Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

7.7. Size:145K toshiba
ssm3k122tu.pdf

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit: mmUnit: mm Low ON-resistance: Ron = 304 m (max) (@VGS = 1.5 V) 2.10.1Ron = 211 m (max) (@VGS = 1.8 V) 1.70.1Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V) 1

7.8. Size:163K toshiba
ssm3k126tu.pdf

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications 4.0 V drive Unit: mm Low ON-resistance: Ron = 43 m (max) (@VGS = 4.0 V) Ron = 32 m (max) (@VGS = 10 V) 2.10.11.70.1Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1Drain-Source voltage VDSS 30 VGate-Source voltag

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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