SSM3K131TU Todos los transistores

 ..1. Size:184K  toshiba
 ssm3k131tu.pdf

SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K131TU High-Speed Switching Applications Unit mm 4.5-V drive Low ON-resistance Ron = 41.5 m (max) (@VGS = 4.5 V) 2.1 0.1 Ron = 27.6 m (max) (@VGS = 10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDSS

 8.1. Size:153K  toshiba
 ssm3k124tu .pdf

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 120 m (max) (@VGS = 4V) 2.1 0.1 Ron = 83 m (max) (@VGS = 10V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain source voltage VDS 30 V Gate source volta

 8.2. Size:231K  toshiba
 ssm3k15act.pdf

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

 8.3. Size:148K  toshiba
 ssm3k104tu.pdf

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit mm Unit mm 1.8 V drive Low ON-resistance Ron = 110 m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 74 m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) 1

 8.4. Size:149K  toshiba
 ssm3k16fu.pdf

 8.5. Size:249K  toshiba
 ssm3k116tu.pdf

SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications Unit mm 2.5V drive 2.1 0.1 Low on-resistance Ron = 135m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 100m (max) (@VGS = 4.5 V) Lead(Pb)-free 1 Maximum Ratings (Ta = 25 C) 2 3 Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate

 8.6. Size:207K  toshiba
 ssm3k15fu.pdf

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-sour

 8.7. Size:191K  toshiba
 ssm3k127tu.pdf

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 1.7 0.1 1.8V drive Low ON-resistance Ron = 286m (max) (@VGS = 1.8V) Ron = 167m (max) (@VGS = 2.5V) 1 Ron = 123m (max) (@VGS = 4.0V) 3 2 Absolute Maximum Ratings (Ta = 25 C

 8.8. Size:156K  toshiba
 ssm3k15f.pdf

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 +0.25 Small package 1.5-0.15 Low on resistance Ron = 4.0 (max) (@VGS = 4 V) 1 Ron = 7.0 (max) (@VGS = 2.5 V) 2 3 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drai

 8.9. Size:171K  toshiba
 ssm3k15fs .pdf

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dr

 8.10. Size:171K  toshiba
 ssm3k17fu.pdf

SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 50 V Gate-S

 8.11. Size:314K  toshiba
 ssm3k124tu.pdf

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit mm 4 V drive 2.1 0.1 Low ON-resistance Ron = 120 m (max) (@VGS = 4V) 1.7 0.1 Ron = 83 m (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate so

 8.12. Size:366K  toshiba
 ssm3k107tu.pdf

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit mm 4 V drive 2.1 0.1 Low ON-resistance Ron = 410 m (max) (@VGS = 4V) 1.7 0.1 Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 20 V Gate s

 8.13. Size:147K  toshiba
 ssm3k16te.pdf

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)

 8.14. Size:197K  toshiba
 ssm3k128tu.pdf

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU High-Speed Switching Applications Power Management Switch Applications UNIT mm 2.1 0.1 4.0V drive 1.7 0.1 Low ON-resistance Ron = 360 m (max) (@VGS = 4.0V) Ron = 217 m (max) (@VGS = 10V) 1 3 2 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Uni

 8.15. Size:136K  toshiba
 ssm3k15fv.pdf

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit mm 1.2 0.05 Optimum for high-density mounting in small packages 0.8 0.05 Low on-resistance RDS(ON) = 4.0 (max) (@VGS = 4 V) RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 Absolute Maximum Ratings (Ta = 25 C) 3 Char

 8.16. Size:166K  toshiba
 ssm3k123tu.pdf

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit mm Unit mm 1.5 V drive Low ON-resistance Ron = 66 m (max) (@VGS = 1.5 V) Ron = 43 m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 32 m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 28 m (max) (@VGS = 4.0 V) Absol

 8.17. Size:157K  toshiba
 ssm3k15ct.pdf

SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Unit mm Analog Switch Applications 0.6 0.05 Optimum for high-density mounting in small packages 0.5 0.03 Low ON-resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Ch

 8.18. Size:224K  toshiba
 ssm3k119tu.pdf

SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K119TU Power Management Switch Applications High Speed Switching Applications Unit mm 1.8 V drive 2.1 0.1 Low ON-resistance Ron = 134 m (max) (@VGS = 1.8V) 1.7 0.1 Ron = 90 m (max) (@VGS = 2.5V) Ron = 74 m (max) (@VGS = 4.0V) 1 Lead(Pb)-free 2 3 Absolute Maximum Ra

 8.19. Size:251K  toshiba
 ssm3k101tu.pdf

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit mm 1.8V drive 2.1 0.1 Low on-resistance Ron = 230m (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit

 8.20. Size:148K  toshiba
 ssm3k16fs.pdf

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)

 8.21. Size:203K  toshiba
 ssm3k15amfv.pdf

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristics Symbol Rating Unit 3 Drain-Source voltage VDSS 30 V

 8.22. Size:219K  toshiba
 ssm3k12t.pdf

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit mm High Speed Switching Applications Small Package Low ON-resistance Ron = 95 m (max) (@VGS = 10 V) Ron = 145 m (max) (@VGS = 4.5 V) High speed ton = 21 ns toff = 16 ns Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain

 8.23. Size:145K  toshiba
 ssm3k122tu.pdf

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit mm Unit mm Low ON-resistance Ron = 304 m (max) (@VGS = 1.5 V) 2.1 0.1 Ron = 211 m (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V) 1

 8.24. Size:251K  toshiba
 ssm3k102tu.pdf

SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit mm 1.8V drive 2.1 0.1 Low on-resistance Ron = 154m (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 99m (max) (@VGS = 2.5 V) Ron = 71m (max) (@VGS = 4.0 V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit

 8.25. Size:139K  toshiba
 ssm3k15fs.pdf

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance R = 4.0 (max) (@V = 4 V) on GS R = 7.0 (max) (@V = 2.5 V) on GS Maximum Ratings (Ta = = 25 C) = = Characteristic Symbol Rating Uni

 8.26. Size:165K  toshiba
 ssm3k121tu.pdf

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit mm Unit mm 1.5 V drive Low ON-resistance Ron = 140 m (max) (@VGS = 1.5 V) Ron = 93 m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 63 m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 48 m (max) (@VGS = 4.0 V) Absolu

 8.27. Size:88K  toshiba
 ssm3k16fv.pdf

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit mm Analog Switch Applications 1.2 0.05 Suitable for high-density mounting due to compact package 0.8 0.05 Low on-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) 1 Absolute Max

 8.28. Size:163K  toshiba
 ssm3k126tu.pdf

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications 4.0 V drive Unit mm Low ON-resistance Ron = 43 m (max) (@VGS = 4.0 V) Ron = 32 m (max) (@VGS = 10 V) 2.1 0.1 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 Drain-Source voltage VDSS 30 V Gate-Source voltag

 8.29. Size:219K  toshiba
 ssm3k14t.pdf

SSM3K14T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM3K14T DC-DC Converter Unit mm High Speed Switching Applications Small Package Low ON-resistance Ron = 39 m (max) (@VGS = 10 V) Ron = 57 m (max) (@VGS = 4.5 V) High speed ton = 24 ns (typ.) toff = 19 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbo

 8.30. Size:227K  toshiba
 ssm3k15afs.pdf

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

 8.31. Size:350K  toshiba
 ssm3k105tu.pdf

SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit mm 4V drive 2.1 0.1 Low on-resistance Ron = 480m (max) (@VGS = 3.3V) 1.7 0.1 Ron = 200m (max) (@VGS = 4V) Ron = 110m (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-

 8.32. Size:229K  toshiba
 ssm3k15afu.pdf

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

 8.33. Size:246K  toshiba
 ssm3k106tu.pdf

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit mm 2.1 0.1 4 V drive 1.7 0.1 Low ON-resistance Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 V Gate-

 8.34. Size:157K  toshiba
 ssm3k16ct.pdf

SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package 0.6 0.05 0.5 0.03 Low ON-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute

 8.35. Size:203K  toshiba
 ssm3k15te.pdf

www.DataSheet4U.com SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 0.8 0.05 Small package Low on resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symb