SSM3K15FV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K15FV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 8.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: SOT723 VESM

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SSM3K15FV datasheet

 ..1. Size:136K  toshiba
 ssm3k15fv.pdf pdf_icon

SSM3K15FV

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit mm 1.2 0.05 Optimum for high-density mounting in small packages 0.8 0.05 Low on-resistance RDS(ON) = 4.0 (max) (@VGS = 4 V) RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 Absolute Maximum Ratings (Ta = 25 C) 3 Char

 6.1. Size:207K  toshiba
 ssm3k15fu.pdf pdf_icon

SSM3K15FV

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-sour

 6.2. Size:156K  toshiba
 ssm3k15f.pdf pdf_icon

SSM3K15FV

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 +0.25 Small package 1.5-0.15 Low on resistance Ron = 4.0 (max) (@VGS = 4 V) 1 Ron = 7.0 (max) (@VGS = 2.5 V) 2 3 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drai

 6.3. Size:171K  toshiba
 ssm3k15fs .pdf pdf_icon

SSM3K15FV

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dr

MOSTRAR MÁS

Otros transistores... SSM3K14T, SSM3K15ACT, SSM3K15AFS, SSM3K15AFU, SSM3K15AMFV, SSM3K15CT, SSM3K15FS, SSM3K15FU, IRF540, SSM3K15F, SSM3K16CT, SSM3K16FS, SSM3K16FU, SSM3K16FV, SSM3K17FU, SSM3K301T, SSM3K302T