SSM3K301T Todos los transistores

 ..1. Size:190K  toshiba
 ssm3k301t.pdf

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications Unit mm High-Speed Switching Applications Unit mm 1.8 V drive Low ON-resistance Ron = 110 m (max) (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V) Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol

 ..2. Size:878K  cn vbsemi
 ssm3k301t.pdf

SSM3K301T www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

 7.1. Size:174K  toshiba
 ssm3k302t.pdf

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications Unit mm High Speed Switching Applications 1.8 V drive Low ON-resistance Ron = 131 m (max) (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V) Ron = 71 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Dr

 7.2. Size:231K  toshiba
 ssm3k309t.pdf

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit mm 1.8V drive Low on-resistance Ron = 47m (max) (@VGS = 1.8V) Ron = 35m (max) (@VGS = 2.5V) Ron = 31m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating

 7.3. Size:190K  toshiba
 ssm3k303t.pdf

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 120 m (max) (@VGS = 4V) Ron = 83 m (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS 20 V DC ID 2.9