SSM3K316T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K316T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm

Encapsulados: TSM

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SSM3K316T datasheet

 ..1. Size:174K  toshiba
 ssm3k316t.pdf pdf_icon

SSM3K316T

SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance Ron = 131 m (max) (@VGS = 1.8 V) Ron = 87 m (max) (@VGS = 2.5 V) Ron = 65 m (max) (@VGS = 4.5 V) Ron = 53 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Ch

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 ssm3k315t.pdf pdf_icon

SSM3K316T

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K315T High-Speed Switching Applications Unit mm 4.5-V drive +0.2 Low ON-resistance Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3 Ron = 27.6 m (max) (@VGS = 10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source

 7.2. Size:188K  toshiba
 ssm3k310t.pdf pdf_icon

SSM3K316T

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit mm Low ON-resistance Ron = 66 m (max) (@VGS = 1.5 V) +0.2 2.8-0.3 Ron = 43 m (max) (@VGS = 1.8 V) +0.2 Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1 Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C)

 7.3. Size:212K  toshiba
 ssm3k318t.pdf pdf_icon

SSM3K316T

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit mm +0.2 4.5 V drive 2.8-0.3 Low ON-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.2 1.6-0.1 RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Sy

MOSTRAR MÁS

Otros transistores... SSM3K16FV, SSM3K17FU, SSM3K301T, SSM3K302T, SSM3K303T, SSM3K309T, SSM3K310T, SSM3K315T, 10N60, SSM3K318T, SSM3K320T, SSM3K329R, SSM3K333R, SSM3K35CT, SSM3K35FS, SSM3K35MFV, SSM3K36FS