SSM3K320T Todos los transistores

 ..1. Size:211K  toshiba
 ssm3k320t.pdf

SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K320T High-Speed Switching Applications Unit mm 4.5 V drive +0.2 Low ON-resistance Ron = 77 m (max) (@VGS = 4.5 V) 2.8-0.3 Ron = 50 m (max) (@VGS = 10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source voltage

 7.1. Size:231K  toshiba
 ssm3k329r.pdf

SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance RDS(ON) = 289 m (max) (@VGS = 1.8 V) RDS(ON) = 170 m (max) (@VGS = 2.5 V) RDS(ON) = 126 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characte

 7.2. Size:219K  toshiba
 ssm3k324r.pdf

SSM3K324R MOSFETs Silicon N-Channel MOS SSM3K324R SSM3K324R SSM3K324R SSM3K324R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 56 m (max) (@VGS = 4.5 V) RDS(ON) = 72 m (max) (@VG

 8.1. Size:190K  toshiba
 ssm3k36fs.pdf

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS High-Speed Switching Applications Unit mm 1.5-V drive Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) Absolute Maximum Rati

 8.2. Size:219K  toshiba
 ssm3k336r.pdf

SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R SSM3K336R SSM3K336R SSM3K336R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG

 8.3. Size:206K  toshiba
 ssm3k315t.pdf

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K315T High-Speed Switching Applications Unit mm 4.5-V drive +0.2 Low ON-resistance Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3 Ron = 27.6 m (max) (@VGS = 10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source

 8.4. Size:370K  toshiba
 ssm3k344r.pdf

SSM3K344R MOSFETs Silicon N-Channel MOS SSM3K344R SSM3K344R SSM3K344R SSM3K344R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.5 V drive (2) Low drain-source on-resistance RDS(ON) = 51 m (Typ.) (@VGS = 4.5 V) RDS(ON) = 63 m (Typ.) (@VGS = 2.5 V)

 8.5. Size:233K  toshiba
 ssm3k361r.pdf

SSM3K361R MOSFETs Silicon N-channel MOS (U-MOS -H) SSM3K361R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance RDS(ON) = 65 m (typ.) (@VGS = 4.5 V) RDS(ON) = 51 m (typ.) (@VGS = 10 V) 3. Packaging and Pin As

 8.6. Size:174K  toshiba
 ssm3k302t.pdf

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications Unit mm High Speed Switching Applications 1.8 V drive Low ON-resistance Ron = 131 m (max) (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V) Ron = 71 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Dr

 8.7. Size:181K  toshiba
 ssm3k37ct.pdf

SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT High Speed Switching Applications Analog Switch Applications Unit mm 1.5Vdrive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratin

 8.8. Size:215K  toshiba
 ssm3k36mfv.pdf

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV High-Speed Switching Applications Unit mm 1.5-V drive 1.2 0.05 Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) 0.8 0.05 Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 1 Ron = 0.63 (max) (@VGS = 5.0 V)

 8.9. Size:223K  toshiba
 ssm3k35ctc.pdf

SSM3K35CTC MOSFETs Silicon N-Channel MOS SSM3K35CTC SSM3K35CTC SSM3K35CTC SSM3K35CTC 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching Analog Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1

 8.10. Size:188K  toshiba
 ssm3k310t.pdf

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit mm Low ON-resistance Ron = 66 m (max) (@VGS = 1.5 V) +0.2 2.8-0.3 Ron = 43 m (max) (@VGS = 1.8 V) +0.2 Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1 Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C)

 8.11. Size:176K  toshiba
 ssm3k37mfv.pdf

SSM3K37MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K37MFV High Speed Switching Applications nit mm Analog Switch Applications 1.2 0.05 0.8 0.05 1.5-V drive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) 1 RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) 2

 8.12. Size:223K  toshiba
 ssm3k35amfv.pdf

SSM3K35AMFV MOSFETs Silicon N-Channel MOS SSM3K35AMFV SSM3K35AMFV SSM3K35AMFV SSM3K35AMFV 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching Analog Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 (max) (@

 8.13. Size:196K  toshiba
 ssm3k37fs.pdf

SSM3K37FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37FS High Speed Switching Applications Analog Switch Applications Unit mm 1.5Vdrive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Rating

 8.14. Size:212K  toshiba
 ssm3k318t.pdf

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit mm +0.2 4.5 V drive 2.8-0.3 Low ON-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.2 1.6-0.1 RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Sy

 8.15. Size:226K  toshiba
 ssm3k318r.pdf

SSM3K318R MOSFETs Silicon N-Channel MOS SSM3K318R SSM3K318R SSM3K318R SSM3K318R 1. Applications 1. Applications 1. Applications 1. Applications Load Switches Ultra-High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) RDS(ON) = 107 m (max) (@VGS

 8.16. Size:231K  toshiba
 ssm3k309t.pdf

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit mm 1.8V drive Low on-resistance Ron = 47m (max) (@VGS = 1.8V) Ron = 35m (max) (@VGS = 2.5V) Ron = 31m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating

 8.17. Size:228K  toshiba
 ssm3k335r.pdf

 8.18. Size:190K  toshiba
 ssm3k301t.pdf

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications Unit mm High-Speed Switching Applications Unit mm 1.8 V drive Low ON-resistance Ron = 110 m (max) (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V) Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol

 8.19. Size:225K  toshiba
 ssm3k339r.pdf

SSM3K339R MOSFETs Silicon N-Channel MOS SSM3K339R SSM3K339R SSM3K339R SSM3K339R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155

 8.20. Size:222K  toshiba
 ssm3k337r.pdf

 8.21. Size:220K  toshiba
 ssm3k311t.pdf

SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 43m (max) (@VGS = 4V) +0.2 2.8-0.3 Ron = 32m (max) (@VGS = 10V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gat

 8.22. Size:189K  toshiba
 ssm3k35fs.pdf

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (@VGS = 2.5 V) Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C)

 8.23. Size:198K  toshiba
 ssm3k35mfv.pdf

SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV High-Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 1.2 V drive 0.8 0.05 Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) Ron = 8 (max) (@VGS = 1.5 V) 1 Ron = 4 (max) (@VGS = 2.5 V) Ron = 3 (max) (@VGS = 4.0 V) 2 3 Absolu

 8.24. Size:372K  toshiba
 ssm3k345r.pdf

SSM3K345R MOSFETs Silicon N-Channel MOS SSM3K345R SSM3K345R SSM3K345R SSM3K345R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.5 V drive (2) Low drain-source on-resistance RDS(ON) = 33 m (max) (@VGS = 4.5 V) RDS(ON) = 45 m (max) (@VGS = 2.5 V) R

 8.25. Size:195K  toshiba
 ssm3k36tu.pdf

SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU High-Speed Switching Applications Unit mm 1.5-V drive Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) 2.1 0.1 Ron = 1.14 (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 1 Ron = 0.63 (max) (@VGS = 5.0 V) 3

 8.26. Size:207K  toshiba
 ssm3k35ct.pdf

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (@VGS = 2.5 V) Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C)

 8.27. Size:228K  toshiba
 ssm3k333r.pdf

SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) SSM3K333R Power Management Switch Applications Unit mm High-Speed Switching Applications +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 3 4.5V drive Low ON-resistance RDS(ON) = 42 m (max) (@VGS = 4.5 V) RDS(ON) = 28 m (max) (@VGS = 10 V) 1 2 0.95 0.95 Absolute Maxi

 8.28. Size:190K  toshiba
 ssm3k303t.pdf

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 120 m (max) (@VGS = 4V) Ron = 83 m (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS 20 V DC ID 2.9

 8.29. Size:174K  toshiba
 ssm3k316t.pdf

SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance Ron = 131 m (max) (@VGS = 1.8 V) Ron = 87 m (max) (@VGS = 2.5 V) Ron = 65 m (max) (@VGS = 4.5 V) Ron = 53 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Ch

 8.30. Size:161K  utc
 ssm3k333r.pdf

UNISONIC TECHNOLOGIES CO., LTD SSM3K333R Preliminary Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * R

 8.31. Size:878K  cn vbsemi
 ssm3k301t.pdf

SSM3K301T www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

 8.32. Size:1450K  cn vbsemi
 ssm3k335.pdf

SSM3K335 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

 8.33. Size:896K  cn vbsemi
 ssm3k333r.pdf

SSM3K333R www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)