SSM3K36TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3K36TU Datasheet (PDF)

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SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 2.10.1: Ron = 1.14 (max) (@VGS = 1.8 V) 1.70.1: Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1: Ron = 0.63 (max) (@VGS = 5.0 V) 3

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ssm3k36fs.pdf pdf_icon

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : Ron = 1.52 (max) (@VGS = 1.5 V) : Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) : Ron = 0.63 (max) (@VGS = 5.0 V) Absolute Maximum Rati

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ssm3k361r.pdf pdf_icon

SSM3K361RMOSFETs Silicon N-channel MOS (U-MOS-H)SSM3K361R1. Applications Power Management Switches DC-DC Converters2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) 175 MOSFET(3) 4.5 V drive(4) Low drain-source on-resistance: RDS(ON) = 65 m (typ.) (@VGS = 4.5 V) RDS(ON) = 51 m (typ.) (@VGS = 10 V)3. Packaging and Pin As

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ssm3k36mfv.pdf pdf_icon

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV High-Speed Switching Applications Unit: mm 1.5-V drive 1.20.05 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 0.80.05: Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1: Ron = 0.63 (max) (@VGS = 5.0 V)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .