BUK112-50GL Todos los transistores

 ..1. Size:91K  philips
 buk112-50gl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a low side ID Continuous drain current 12 A switch for automotive applicatio

 9.1. Size:87K  philips
 buk110-50gl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 45 A general purpose switch for P

 9.2. Size:111K  philips
 buk114-50l-s.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin surface VDS Continuous drain source voltage 50 V mounting plastic envelope, intended ID Continuous drain current 15 A as a general purpose

 9.3. Size:44K  philips
 buk118-50dl.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 V assembled in a 3 pin plastic ID Continuous drain current 16 A package. PD Total power dissipation 65 W Tj Continuous

 9.4. Size:72K  philips
 buk110-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK110-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 45 A general purpose switch for P

 9.5. Size:113K  philips
 buk114-50l-s 1.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin surface VDS Continuous drain source voltage 50 V mounting plastic envelope, intended ID Continuous drain current 15 A as a general purpose

 9.6. Size:44K  philips
 buk119-50dl.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK119-50DL DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 V assembled in a 3 pin plastic ID Continuous drain current 20 A package. PD Total power dissipation 90 W Tj Continuous

 9.7. Size:93K  philips
 buk111-50gl 1.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK111-50GL SMD version of BUK112-50GL DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic SMD VDS Continuous drain source voltage 50 V envelope, intended as a low side ID Continuous drain current 12 A switch for automotive

 9.8. Size:108K  philips
 buk116-50l-s 1.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK116-50L/S SMD version of BUK106-50L/S DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin surface VDS Continuous drain source voltage 50 V mounting plastic envelope, intended ID Continuous drain current 50 A as a general purpose

 9.9. Size:32K  philips
 buk113-50dl 1.pdf

Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MIN. MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage - 50 V a general purpose switch for automotive systems and other ID Drain current l

 9.10. Size:89K  philips
 buk110-50gs 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch for automotive PD Total power