BUK112-50GL Todos los transistores

 

BUK112-50GL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK112-50GL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.093 Ohm
   Paquete / Cubierta: SOT26301
     - Selección de transistores por parámetros

 

BUK112-50GL Datasheet (PDF)

 ..1. Size:91K  philips
buk112-50gl 1.pdf pdf_icon

BUK112-50GL

Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive applicatio

 9.1. Size:87K  philips
buk110-50gl 1.pdf pdf_icon

BUK112-50GL

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.2. Size:111K  philips
buk114-50l-s.pdf pdf_icon

BUK112-50GL

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.3. Size:44K  philips
buk118-50dl.pdf pdf_icon

BUK112-50GL

Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 16 Apackage. PD Total power dissipation 65 WTj Continuous

Otros transistores... BUK108-50GS , BUK109-50DL , BUK109-50GL , BUK109-50GS , BUK110-50DL , BUK110-50GL , BUK110-50GS , BUK111-50GL , RU6888R , BUK114-50L , BUK114-50S , BUK116-50L , BUK116-50S , BUK200-50X , BUK203-50X , BUK203-50Y , BUK204-50Y .

History: NTB6410AN | SDF1NA60

 

 
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