SSM3K43FS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3K43FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K43FS High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : Ron = 1.52 (max) (@VGS = 1.5V) : Ron = 1.14 (max) (@VGS = 1.8V) : Ron = 0.85 (max) (@VGS = 2.5V) : Ron = 0.66 (max) (@VGS = 4.5V) : Ron = 0.63 (max) (@VGS = 5.0V) Absolute Maximum Ratings (

SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Unit: mm1.20.05 Compact package suitable for high-density mounting 0.80.05 Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1Absolute Maximum Ratings (Ta = 25C) 3Chara

SSM3K48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM3K48FU Load Switching Applications Unit: mm 2.5-V drive Low ON-resistance: RDS(ON) = 3.2 (max) (@VGS = 4.0 V) RDS(ON) = 5.4 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 20 V

SSM3K44FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating U