SSM5N05FU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM5N05FU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: SOT353 SC88A USV

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SSM5N05FU datasheet

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SSM5N05FU

SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit mm Optimum for high-density mounting in small packages Low on-resistance Ron = 0.8 (max) (@VGS = 4 V) Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symb

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ssm5n03fe.pdf pdf_icon

SSM5N05FU

SSM5N03FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM5N03FE High-Speed Switching Applications Unit mm Analog-Switch Applications Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suita

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SSM5N05FU

 9.2. Size:178K  toshiba
ssm5n15fu.pdf pdf_icon

SSM5N05FU

SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Unit mm Analog Switch Applications Small package Low ON resistance RDS (ON) = 4.0 (max) (@VGS = 4 V) RDS (ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source vol

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