SSM6J07FU
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6J07FU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 0.8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 52
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45
Ohm
Paquete / Cubierta:
SOT363
SC88
US6
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SSM6J07FU
Datasheet (PDF)
..1. Size:136K toshiba
ssm6j07fu.pdf 
SSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : R = 450 m (max) (V = -10 V) on GS: Ron = 800 m (max) (VGS = -4 V) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS -30 VGate-source voltage V
8.1. Size:189K toshiba
ssm6j06fu.pdf
SSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 max (V = -4 V) GS : Ron = 0.7 max (V = -2.5 V) GS Low gate threshold voltage Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-sourc
8.2. Size:152K toshiba
ssm6j08fu.pdf
SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch Unit: mmDC-DC Converter Small Package Low on Resistance : R = 0.18 (max) (@V = -4 V) on GS: R = 0.26 (max) (@V = -2.5 V) on GS Low Gate Threshold Voltage Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-Sour
9.1. Size:222K toshiba
ssm6j771g.pdf
SSM6J771GMOSFETs Silicon P-Channel MOSSSM6J771GSSM6J771GSSM6J771GSSM6J771G1. Applications1. Applications1. Applications1. Applications BATFETs Power Management Switches2. Features2. Features2. Features2. Features(1) High VGSS voltage : 12V(2) High VDSS voltage : -20V(3) Low drain-source on-resistance: RDS(ON) = 26 m (typ.) (@VGS = -4.5 V,ID = -3.
9.2. Size:240K toshiba
ssm6j507nu.pdf
SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5
9.3. Size:277K toshiba
ssm6j51tu.pdf
SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J51TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on-resistance: Ron = 54 m (max) (@VGS = -2.5 V) 85 m (max) (@VGS = -1.8 V) 150m(max) (@VGS = -1.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
9.4. Size:197K toshiba
ssm6j402tu.pdf
SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0 V drive 1.70.1 Low ON-resistance : RDS(ON) = 225m max (@VGS = -4 V) : RDS(ON) = 117m max (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating
9.5. Size:305K toshiba
ssm6j206fe.pdf
SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE Power Management Switch Applications Unit: mm High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 m (max) (@VGS = -1.8 V) Ron = 186 m (max) (@VGS = -2.5 V) R = 130 m (max) (@V = -4.0 V) on GS Lead (Pb) free Maximum Ratings (Ta = 25C) Cha
9.6. Size:152K toshiba
ssm6j25fe.pdf
SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) 1.20.05Ron = 430m (max) (@VGS = -2.5 V) 1 65Maximum Ratings (Ta = 25C) 243Characteristics Symbol Rating Uni
9.7. Size:217K toshiba
ssm6j410tu.pdf
SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J410TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Sou
9.8. Size:221K toshiba
ssm6j409tu.pdf
SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 72.3m (max) (@VGS = -1.5 V) Ron = 46.2m (max) (@VGS = -1.8 V) Ron = 30.2m (max) (@VGS = -2.5 V) Ron = 22.1m (max) (@VGS = -4.5 V) Absolut
9.9. Size:370K toshiba
ssm6j512nu.pdf
SSM6J512NUMOSFETs Silicon P-Channel MOSSSM6J512NUSSM6J512NUSSM6J512NUSSM6J512NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 24.0 m (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 m (typ.) (@VGS = -2.5 V
9.10. Size:295K toshiba
ssm6j511nu.pdf
SSM6J511NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J511NUSSM6J511NUSSM6J511NUSSM6J511NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (max) (@VGS = -2.5 V) RDS(ON) = 10 m (max) (@VGS =
9.11. Size:250K toshiba
ssm6j23fe.pdf
SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J23FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDra
9.12. Size:299K toshiba
ssm6j53fe.pdf
SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE High-Speed Switching Applications Unit : mm Power Management Switch Applications 1.60.051.20.05 1.5 V drive Suitable for high-density mounting due to compact package 1 6 Low on-resistance : Ron = 136 m (max) (@VGS = -2.5 V) : Ron = 204 m (max) (@VGS = -1.8 V) 52:
9.13. Size:202K toshiba
ssm6j213fe.pdf
SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25
9.14. Size:237K toshiba
ssm6j503nu.pdf
SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
9.15. Size:218K toshiba
ssm6j205fe.pdf
SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) Ron = 234 m (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25C) Characteristic Sym
9.16. Size:205K toshiba
ssm6j412tu.pdf
SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J412TU Power Management Switch Applications Unit: mm2.10.1 1.5-V drive1.70.1 Low ON-resistance: RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2A
9.17. Size:226K toshiba
ssm6j215fe.pdf
SSM6J215FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J215FESSM6J215FESSM6J215FESSM6J215FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =
9.18. Size:157K toshiba
ssm6j21tu.pdf
SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J21TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12
9.19. Size:215K toshiba
ssm6j216fe.pdf
SSM6J216FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J216FESSM6J216FESSM6J216FESSM6J216FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS
9.20. Size:236K toshiba
ssm6j502nu.pdf
SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
9.21. Size:241K toshiba
ssm6j50tu.pdf
SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Ra
9.22. Size:205K toshiba
ssm6j501nu.pdf
SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J501NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
9.23. Size:235K toshiba
ssm6j505nu.pdf
SSM6J505NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.2 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -
9.24. Size:154K toshiba
ssm6j26fe.pdf
SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) 1.20.05Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) 1 65Maximum Ratings (Ta = 25C) 24
9.25. Size:207K toshiba
ssm6j214fe.pdf
SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J214FE Power Management Switch Applications Unit: mm 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 m (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta
9.26. Size:190K toshiba
ssm6j212fe.pdf
SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J212FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta
9.27. Size:215K toshiba
ssm6j414tu.pdf
SSM6J414TUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J414TUSSM6J414TUSSM6J414TUSSM6J414TU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -
9.28. Size:312K toshiba
ssm6j207fe.pdf
SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 491 m (max) (@VGS = -4 V) Ron = 251 m (max) (@VGS = -10 V) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID -1.4
9.29. Size:197K toshiba
ssm6j401tu.pdf
SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : RDS(ON) = 145m (max) (@VGS = -4 V) : RDS(ON) = 73m (max) (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating
Otros transistores... SSM5N15FU
, SSM5N16FE
, SSM5N16FU
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, SSM5P16FE
, SSM5P16FU
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, SSM6J08FU
, SSM6J205FE
, SSM6J206FE
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, SSM6J212FE
, SSM6J213FE
, SSM6J214FE
, SSM6J21TU
.
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