SSM6J212FE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6J212FE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 127 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0407 Ohm

Encapsulados: SOT563 ES6

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SSM6J212FE datasheet

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 ssm6j212fe.pdf pdf_icon

SSM6J212FE

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J212FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta

 7.1. Size:202K  toshiba
 ssm6j213fe.pdf pdf_icon

SSM6J212FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J213FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.2. Size:226K  toshiba
 ssm6j215fe.pdf pdf_icon

SSM6J212FE

SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 7.3. Size:157K  toshiba
 ssm6j21tu.pdf pdf_icon

SSM6J212FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J21TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12

MOSTRAR MÁS

Otros transistores... SSM5P16FE, SSM5P16FU, SSM6J06FU, SSM6J07FU, SSM6J08FU, SSM6J205FE, SSM6J206FE, SSM6J207FE, 4N60, SSM6J213FE, SSM6J214FE, SSM6J21TU, SSM6J23FE, SSM6J25FE, SSM6J26FE, SSM6J401TU, SSM6J402TU