BUK116-50L Todos los transistores

 

BUK116-50L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK116-50L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT426

 Búsqueda de reemplazo de MOSFET BUK116-50L

 

BUK116-50L Datasheet (PDF)

 0.1. Size:108K  philips
buk116-50l-s 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification Logic level TOPFET BUK116-50L/S SMD version of BUK106-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 50 Aas a general purpose

 9.1. Size:87K  philips
buk110-50gl 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.2. Size:111K  philips
buk114-50l-s.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.3. Size:44K  philips
buk118-50dl.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 16 Apackage. PD Total power dissipation 65 WTj Continuous

 9.4. Size:72K  philips
buk110-50dl 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification PowerMOS transistor BUK110-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.5. Size:113K  philips
buk114-50l-s 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.6. Size:44K  philips
buk119-50dl.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification Logic level TOPFET BUK119-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 20 Apackage. PD Total power dissipation 90 WTj Continuous

 9.7. Size:91K  philips
buk112-50gl 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive applicatio

 9.8. Size:93K  philips
buk111-50gl 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification Logic level TOPFET BUK111-50GL SMD version of BUK112-50GL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic SMD VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive

 9.9. Size:32K  philips
buk113-50dl 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MIN. MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage - 50 Va general purpose switch forautomotive systems and other ID Drain current l

 9.10. Size:89K  philips
buk110-50gs 1.pdf

BUK116-50L
BUK116-50L

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch for automotive PD Total power

Otros transistores... BUK109-50GS , BUK110-50DL , BUK110-50GL , BUK110-50GS , BUK111-50GL , BUK112-50GL , BUK114-50L , BUK114-50S , 2N7000 , BUK116-50S , BUK200-50X , BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A .

 

 
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